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STMicroelectronics Silicon Junction Switching Diode 8 A 1200 V TO-263 3-Pin STTH812G-TR
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 4.6mm |
| Length | 10.4mm |
| Model | STTH812G-TR |
| Width | 9.35mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-263 |
| Sub Type | Silicon Junction |
| Minimum Operating Temperature | -65°C |
| Pin Count | 3 |
| Diode Configuration | Single |
| Peak Non-Repetitive Forward Surge Current Ifsm | 100A |
| Maximum Forward Voltage Vf | 2.2V |
| Peak Reverse Recovery Time trr | 50ns |
| Maximum Forward Current If | 8A |
| Maximum Peak Reverse Repetitive Voltage Vrrm | 1200V |
Key Features
- Single diode configuration optimized for switching applications.
- Surface mount type in TO-263 package with 3 pins.
- Maximum forward voltage of 2.2 V ensures efficient conduction.
- Peak reverse recovery time of 50 ns supports high-speed switching.
- Operating temperature range from -65°C to 175°C for robust performance.
- Peak non-repetitive forward surge current of 100 A for transient handling.
- Designed for use in industrial and electronic power circuits.
- RoHS compliant and suitable for automated manufacturing processes.
Product Description
STMicroelectronics STTH812G-TR is a single silicon junction switching diode delivering a maximum forward current of 8 A and a peak repetitive reverse voltage of 1200 V in a compact TO-263 surface-mount package with 3 pins. It provides reliable switching performance with a peak reverse recovery time of 50 ns and a maximum forward voltage of 2.2 V, making it ideal for industrial, electronic components, and power applications.
The diode operates efficiently over a wide temperature range from -65°C to 175°C, assuring durability in demanding environments. Its peak non-repetitive forward surge current of 100 A allows it to handle transient conditions effectively. The small form factor with dimensions 10.4 mm length, 9.35 mm width, and 4.6 mm height supports space-saving PCB layouts and automated surface mount assembly.
This device is extensively used in power switching circuits, rectification, and electronic systems requiring high switching speeds and current handling capabilities. It is not rated for automotive standards but meets general semiconductor quality requirements.
Single diode configuration optimized for switching applications. Surface mount type in TO-263 package with 3 pins. Maximum forward voltage of 2.2 V ensures efficient conduction. Peak reverse recovery time of 50 ns supports high-speed switching.
Operating temperature range from -65°C to 175°C for robust performance. Peak non-repetitive forward surge current of 100 A for transient handling. Compact dimensions: length 10.4 mm, width 9.35 mm, height 4.6 mm. Designed for use in industrial and electronic power circuits.
RoHS compliant and suitable for automated manufacturing processes.
For designers and engineers requiring reliable discrete semiconductors, this STMicroelectronics STTH812G-TR diode supports efficient switching and power management in electronic and industrial equipment. Discover similar Switching Diodes and semiconductors in the Electronics & Electricals category on EnvMart.
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Frequently Asked Questions
The maximum forward current of the STTH812G-TR diode is 8 A.
The peak reverse recovery time for the STTH812G-TR is 50 ns, which supports high-speed switching applications.
The maximum peak reverse repetitive voltage of this diode is 1200 V.
The dimensions of the TO-263 package are 10.4 mm in length, 9.35 mm in width, and 4.6 mm in height.
The operating temperature range for this model is from -65°C to 175°C.
The maximum forward voltage of the STTH812G-TR diode is 2.2 V, ensuring efficient conduction.
The peak non-repetitive forward surge current rating for this diode is 100 A, allowing it to handle transient conditions effectively.
The STTH812G-TR features a single diode configuration optimized for switching applications.
Yes, the STTH812G-TR is RoHS compliant, making it suitable for automated manufacturing processes.
This diode is designed for use in industrial and electronic power circuits, particularly in power switching and rectification applications.
The TO-263 package of the STTH812G-TR has 3 pins.
The country of origin for the STTH812G-TR diode is India.
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