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onsemi Small Signal PNP Transistor, -500 mA DC Collector Current, -80 V Collector Emitter Voltage, 3-Pin SOT-23 MMBTA56LT3G

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onsemi Small Signal PNP Transistor, -500 mA DC Collector Current, -80 V Collector Emitter Voltage, 3-Pin SOT-23 MMBTA56LT3G

Name: onsemi Small Signal PNP Transistor, -500 mA DC Collector Current, -80 V Collector Emitter Voltage, 3-Pin SOT-23 MMBTA56LT3G
Brand: onsemi
SKU: 371656
Price: 0.04 USD
Availability: InStock

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Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin	India
Brand	onsemi
Height	1.11mm
Length	3.04mm
Model	MMBTA56LT3G
Width	1.4mm
Mount Type	Surface
Series	MMBTA56L
Maximum Operating Temperature	150°C
Package Type	SOT-23
Minimum Operating Temperature	-55°C
Pin Count	3
Maximum Collector Emitter Voltage Vceo	-80V dc
Minimum DC Current Gain hFE	100
Transistor Polarity	PNP
Maximum Emitter Base Voltage VEBO	4V
Maximum Collector Base Voltage VCBO	80V dc
Automotive Standard	AEC-Q101
Maximum Power Dissipation Pd	300mW
Maximum DC Collector Current Idc	-500mA
Transistor Configuration	Single
Maximum Transition Frequency ft	50MHz

Key Features

Designed in a compact 3-pin SOT-23 package for surface mounting.
Automotive qualified to AEC-Q101 standard ensuring reliability under harsh conditions.
Maximum power dissipation rated at 300 mW for moderate power applications.
Minimum DC current gain (hFE) of 100 ensures sufficient amplification.
Operating temperature range spans from -55°C to 150°C for versatility.
Maximum transition frequency (ft) of 50 MHz suitable for high frequency switching.
Flat dimensions approximately 3.04 mm length, 1.4 mm width, and 1.11 mm height.
Pin count of 3 supporting standard transistor configurations.

Product Description

onsemi MMBTA56LT3G is a small signal PNP transistor designed for use in electronic circuits requiring moderate current gain and reliable switching performance.

Encased in a compact SOT-23 surface mount package, it supports a maximum collector current of -500 mA and can withstand a collector emitter voltage up to -80 V dc, making it suitable for various power and signal amplification tasks.

The transistor features a minimum DC gain (hFE) of 100 and a maximum power dissipation of 300 mW, solidifying its applicability in automotive and industrial electronics. Qualified to the AEC-Q101 automotive standard, this transistor offers excellent reliability under harsh operating conditions spanning temperatures from -55°C to 150°C.

Its maximum transition frequency of 50 MHz supports high-speed switching, useful in communication and signal processing applications. The device’s 3-pin configuration is ideal for easy integration on printed circuit boards via surface mounting.

Compact 3-pin SOT-23 surface mount package. 500 mA maximum collector current capability. 80 V maximum collector emitter voltage rating. Automotive standard AEC-Q101 compliant. Wide operating temperature range from -55°C to 150°C.

High transition frequency for efficient switching. Minimum current gain of 100 for reliable amplification. This transistor is commonly used in automotive electronics, industrial devices, communication equipment, and general-purpose switching circuits.

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Frequently Asked Questions

The maximum collector current for this model is -500 mA, suitable for moderate power applications.

The maximum collector-emitter voltage rating is -80 V dc, which allows for various power and signal amplification tasks.

The minimum DC current gain (hFE) is 100, ensuring sufficient amplification for electronic circuits.

This transistor operates within a temperature range of -55°C to 150°C, making it versatile for different applications.

The MMBTA56LT3G is encased in a compact SOT-23 surface mount package with dimensions of approximately 3.04 mm in length, 1.4 mm in width, and 1.11 mm in height.

The maximum power dissipation is rated at 300 mW, suitable for moderate power applications.

This transistor is qualified to the AEC-Q101 automotive standard, ensuring reliability under harsh conditions.

The maximum transition frequency (ft) is 50 MHz, making it suitable for high-speed switching applications.

This model has a pin count of 3, supporting standard transistor configurations for easy integration.

The maximum emitter-base voltage (VEBO) is 4 V, which is important for maintaining operational integrity.

This transistor is commonly used in automotive electronics, industrial devices, communication equipment, and general-purpose switching circuits.

The transistor has a PNP polarity, making it suitable for specific circuit designs that require this configuration.