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Nexperia Isolated Trench P-Channel MOSFET 50 V 160 mA Enhancement 6-Pin SC-88 BSS84AKS,115
Specifications
| Country of Origin | India |
|---|---|
| Brand | Nexperia |
| Height | 1mm |
| Length | 2.2mm |
| Model | BSS84AKS,115 |
| Width | 1.35mm |
| Mount Type | Surface |
| Series | Trench MOSFET |
| Maximum Operating Temperature | +150°C |
| Package Type | SC-88 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 6 |
| Number of Elements per Chip | 2 |
| Automotive Standard | AEC-Q101 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 160mA |
| Maximum Drain Source Voltage Vds | 50V |
| Maximum Drain Source Resistance Rds | 7.5Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 320mW |
| Typical Gate Charge Qg @ Vgs | 0.26nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Transistor Configuration | Isolated |
Key Features
- The device features an enhancement mode channel configuration ensuring controlled operation.
- It supports a maximum power dissipation of 320 mW suitable for low power applications.
- Comes in a compact SC-88 6-pin surface mount package measuring 2.2mm length by 1.35mm width and 1mm height.
- Operates within a wide temperature range from -55°C to +150°C, suitable for industrial use.
- Isolated transistor configuration with two elements per chip enhances device reliability and performance.
- Typical gate charge of 0.26 nC at specified gate voltage supports efficient switching.
- Automotive standard AEC-Q101 certified, assuring quality and durability in automotive environments.
- Maximum gate-source voltage is ±20 V ensuring robust gate control.
Product Description
Nexperia BSS84AKS,115 is an isolated trench P-Channel MOSFET transistor engineered for high reliability and precise control in electronic circuits. It operates at a maximum continuous drain current of 160 mA and a drain-source voltage of 50 V, making it suitable for various low-power and medium voltage applications in industrial, automotive, and consumer electronics sectors.
This enhancement mode MOSFET features a compact 6-pin SC-88 surface mount package with dimensions of 2.2 mm length, 1.35 mm width, and 1 mm height, facilitating dense PCB layouts and efficient thermal management. The transistor configuration includes two elements per chip, enhancing performance and device stability.
Its electrical characteristics include a maximum power dissipation of 320 mW and a typical gate charge of 0.26 nC at designated gate voltage, which supports efficient switching with minimal power loss. The transistor maintains operation over a wide temperature range from -55°C to +150°C, and compliance with the AEC-Q101 automotive standard ensures suitability for automotive electronics applications.
The device features an enhancement mode channel configuration ensuring controlled operation. Compact SC-88 package optimizes board space and thermal performance. High voltage rating of 50 V supports diverse application needs.
Compliant with automotive-grade reliability standards AEC-Q101. Low gate charge optimizes switching efficiency and reduces power loss. Wide operating temperature range for robust industrial and automotive use. Isolated transistor configuration with two elements per chip enhances electrical performance.
Surface mount package with 6 pins facilitates modern PCB assembly techniques.
This MOSFET is ideal for switching and amplification in circuits requiring high reliability, automotive compliance, and efficient power usage. Its isolated trench technology provides improved switching characteristics and device longevity.
Discover more components in the MOSFET category to support your advanced electronics and power management designs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 160 mA.
This MOSFET has a maximum drain-source voltage of 50 V.
It supports a maximum power dissipation of 320 mW, suitable for low power applications.
The SC-88 package measures 2.2 mm in length, 1.35 mm in width, and 1 mm in height.
The typical gate charge at the specified gate voltage is 0.26 nC.
It operates within a wide temperature range from -55°C to +150°C.
This device is compliant with the AEC-Q101 automotive standard, ensuring quality and reliability in automotive applications.
The transistor configuration includes two elements per chip, enhancing performance and stability.
The maximum gate-source voltage is ±20 V, providing robust gate control.
It features an enhancement mode channel configuration, which ensures controlled operation.
This model is designed for surface mounting, facilitating modern PCB assembly techniques.
The country of origin for this MOSFET is India.
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