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onsemi Low Noise NPN Bipolar Transistor 100 mA 60 V Surface Mount SOT-23 MMBT2484LT1G

Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 2.64mm
Length 3.04mm
Model MMBT2484LT1G
Width 1.4mm
Mount Type Surface
Maximum Operating Temperature 150°C
Package Type SOT-23
Pin Count 3
Maximum Collector Emitter Voltage Vceo 60V
Minimum DC Current Gain hFE 250
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 6V
Maximum Collector Base Voltage VCBO 60V
Maximum Power Dissipation Pd 300mW
Maximum DC Collector Current Idc 100mA
Transistor Configuration Single
Maximum Transition Frequency ft 1MHz

Key Features

  • Low noise bipolar transistor ideal for signal amplification.
  • Maximum DC collector current of 100 mA ensures efficient current handling.
  • Collector emitter voltage rating of 60 V for robust performance.
  • Surface-mount package type SOT-23 enables compact PCB designs.
  • High minimum DC current gain (hFE) of 250 enhances amplification.
  • Maximum power dissipation of 300 mW to handle moderate power loads.
  • Supports operation up to 150°C maximum temperature for reliability.
  • Pin count is 3 in a small footprint of 3.04 mm length, 2.64 mm height, and 1.4 mm width.

Product Description

onsemi MMBT2484LT1G is a low noise NPN bipolar transistor designed for electronic applications requiring efficient signal amplification with low distortion. It supports a maximum DC collector current of 100 mA and a collector emitter voltage rating of 60 V, making it suitable for moderate current switching and amplification tasks in electronic circuits.

Featuring a surface-mount SOT-23 package, this transistor offers a compact form factor with its dimensions of 3.04 mm length, 2.64 mm height, and 1.4 mm width, allowing efficient use in densely populated circuit boards. The device has a maximum power dissipation of 300 mW, ensuring reliable operation under moderate load conditions.

The high minimum DC current gain (hFE) of 250 provides amplification with enhanced efficiency, while the maximum operating temperature of 150°C supports durability in demanding environments. This 3-pin transistor has a single transistor configuration and NPN polarity, ideal for switching and amplification in industrial, consumer electronics, and communication equipment.

Low noise bipolar transistor ideal for signal amplification. Maximum DC collector current of 100 mA for robust current handling. Collector emitter voltage rating of 60 V for durability. SOT-23 surface mount package for compact PCB design.

High minimum DC current gain of 250 enhances performance. Maximum power dissipation of 300 mW for reliability. Wide operating temperature range up to 150°C for harsh conditions. Compact dimensions support space-saving designs.

This transistor suits applications in industrial control systems, consumer electronics, communication devices, and laboratory equipment where low noise and reliable switching are needed. onsemi is a trusted provider of semiconductor components with proven quality and performance.

Explore similar Bipolar Transistors and other semiconductors on EnvMart for comprehensive solutions.

onsemi Low Noise NPN Bipolar Transistor 100 mA 60 V Surface Mount SOT-23 MMBT2484LT1G
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Frequently Asked Questions

The maximum DC collector current for this model is 100 mA, allowing it to handle moderate current switching tasks effectively.

This transistor has a collector emitter voltage rating of 60 V, making it suitable for various electronic applications.

It comes in a surface-mount SOT-23 package, which is designed for compact PCB designs.

The dimensions of this model are 3.04 mm in length, 2.64 mm in height, and 1.4 mm in width.

The minimum DC current gain (hFE) for this model is 250, which enhances its amplification efficiency.

This transistor has a maximum power dissipation rating of 300 mW, suitable for handling moderate power loads.

The maximum operating temperature for this transistor is 150°C, which supports its reliability in demanding environments.

This model features a 3-pin configuration, making it compact and easy to integrate into circuit designs.

The transistor polarity of this model is NPN, which is commonly used for switching and amplification applications.

This transistor is suitable for applications in industrial control systems, consumer electronics, communication devices, and laboratory equipment where low noise is essential.

The maximum transition frequency (ft) for this model is 1 MHz, which is relevant for its performance in high-speed applications.

The maximum emitter base voltage (VEBO) is 6 V, and the maximum collector base voltage (VCBO) is 60 V, ensuring safe operation in various circuits.

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