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onsemi NPN Bipolar Transistor 50 mA Collector Current, 30 V Collector Emitter Voltage, 3-Pin SOT-23 MMBT5088LT1G

Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 2.64mm
Length 3.04mm
Model MMBT5088LT1G
Width 1.4mm
Mount Type Surface
Maximum Operating Temperature 150°C
Package Type SOT-23
Pin Count 3
Maximum Collector Emitter Voltage Vceo 30V
Minimum DC Current Gain hFE 300
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 4.5V
Maximum Collector Base Voltage VCBO 30V
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 300mW
Maximum DC Collector Current Idc 50mA
Transistor Configuration Single
Maximum Transition Frequency ft 20MHz

Key Features

  • Operates with a maximum collector current of 50 mA.
  • Maximum collector-emitter voltage rating is 30 V.
  • Features a low noise design suitable for high-frequency applications.
  • Rated for a maximum power dissipation of 300 mW.
  • Minimum DC current gain (hFE) of 300 ensures effective amplification.
  • Compact surface mount package type SOT-23 with three pins suitable for PCB assembly.
  • Maximum transition frequency of 20 MHz for high-speed switching.
  • Designed to withstand operating temperatures up to 150°C.

Product Description

The onsemi MMBT5088LT1G is a low noise NPN bipolar transistor designed for high-frequency applications requiring reliable amplification with a maximum collector current of 50 mA and a collector-emitter voltage of 30 V. It is housed in a compact 3-Pin SOT-23 surface-mount package suitable for space-constrained PCB layouts.

Its minimum DC current gain of 300 and maximum transition frequency of 20 MHz makes it ideal for switching and amplification tasks in consumer electronics, communication devices, automotive electronics, and other industrial electronics circuits.

Key electrical specifications include a maximum power dissipation of 300 mW, maximum collector-base voltage of 30 V, and maximum emitter-base voltage of 4.5 V, providing robust performance under operational stresses.

The transistor supports maximum operating temperatures up to 150°C, allowing use in environments with thermal challenges. Additionally, this component meets the automotive AEC-Q101 standard ensuring quality and reliability in automotive electronic systems.

Operates with a maximum collector current of 50 mA. Maximum collector-emitter voltage rating is 30 V. Features a low noise design suitable for high-frequency applications. Rated for a maximum power dissipation of 300 mW.

Minimum DC current gain (hFE) of 300 ensures effective amplification. Compact surface mount package type SOT-23 with three pins suitable for PCB assembly. Maximum transition frequency of 20 MHz for high-speed switching. Designed to withstand operating temperatures up to 150°C.

Complies with automotive standard AEC-Q101, suitable for automotive applications. Dimensions: length 3.04 mm, width 1.4 mm, height 2.64 mm optimize space on circuit boards.

This transistor is widely used in electronic and semiconductor applications, including industrial, automotive, communication, and power management sectors where compact size, high reliability, and performance consistency are vital.

Explore more onsemi Bipolar Transistors and electronics components on EnvMart for diversified solutions and bulk procurement.

onsemi NPN Bipolar Transistor 50 mA Collector Current, 30 V Collector Emitter Voltage, 3-Pin SOT-23 MMBT5088LT1G
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Frequently Asked Questions

The maximum collector current for this model is 50 mA.

It has a maximum collector-emitter voltage rating of 30 V.

This transistor is rated for a maximum power dissipation of 300 mW.

The minimum DC current gain (hFE) for this model is 300.

It features a maximum transition frequency of 20 MHz, suitable for high-speed switching applications.

The dimensions are 3.04 mm in length, 1.4 mm in width, and 2.64 mm in height.

This transistor comes in a compact SOT-23 surface mount package with three pins.

It is designed to withstand maximum operating temperatures up to 150°C.

Yes, it complies with the automotive standard AEC-Q101, ensuring quality and reliability in automotive applications.

The maximum emitter-base voltage for this model is 4.5 V.

This unit is suitable for applications in consumer electronics, communication devices, automotive electronics, and industrial electronics circuits.

It is an NPN bipolar transistor, designed for reliable amplification and switching tasks.

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