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onsemi Small Signal PNP Transistor, 3-Pin SOT-323, -200 mA, -40 V, 150 mW MMBT3906WT1G

Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 1mm
Length 2.2mm
Model MMBT3906WT1G
Width 1.35mm
Mount Type Surface
Series MMBT3906W
Maximum Operating Temperature 150°C
Package Type SOT-323
Minimum Operating Temperature -55°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo -40V
Minimum DC Current Gain hFE 30
Transistor Polarity PNP
Maximum Emitter Base Voltage VEBO -5V
Maximum Collector Base Voltage VCBO -40V
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 150mW
Maximum DC Collector Current Idc -200mA
Transistor Configuration Single
Maximum Transition Frequency ft 100MHz
onsemi SBC807-40WT1G Transistor, 500 mA PNP, 45 V, 3-Pin SOT-323Brand onsemi

Key Features

  • This transistor offers a maximum power dissipation of 150 mW for reliable operation.
  • The device features a minimum DC current gain (hFE) of 30 for effective signal amplification.
  • It supports an operating temperature range from -55°C up to 150°C, ensuring durability in harsh environments.
  • The maximum transition frequency is 100 MHz, suitable for high-frequency switching applications.
  • Configured as a single PNP transistor, it is ideal for amplification and switching in electronic circuits.
  • Its compact dimensions are 2.2 mm length, 1.35 mm width, and 1 mm height, enabling space-saving PCB designs.
  • Meets the automotive standard AEC-Q101, assuring quality for automotive electronics.

Product Description

onsemi MMBT3906WT1G is a high-quality small signal PNP transistor designed for diverse electronic applications. Its maximum collector current rating of -200 mA and collector-emitter voltage of -40 V make it suitable for switching and amplification tasks in electronic circuits.

This transistor is supplied in a compact 3-pin SOT-323 surface mount package, allowing efficient use of PCB space in modern electronic designs. The device has a maximum power dissipation of 150 mW, balancing performance and thermal management.

The device features a minimum DC current gain (hFE) of 30, supporting good signal amplification capabilities. It operates reliably within the temperature range of -55°C to 150°C, making it suitable for use in industrial, automotive, and commercial electronic equipment.

With a maximum transition frequency of 100 MHz, the MMBT3906WT1G supports moderately high-frequency operations, ideal for switching power supplies, signal processing, and driver circuits.

The transistor configuration is single PNP, which is commonly used for general purpose amplification and switching semiconductor circuits. The compact physical dimensions of 2.2 mm length, 1.35 mm width, and 1 mm height provide designers flexibility for compact PCB layouts.

This transistor complies with the automotive standard AEC-Q101, ensuring suitability for automotive electronic applications requiring stringent quality and reliability standards. This transistor offers a maximum power dissipation of 150 mW for reliable operation.

The device features a minimum DC current gain (hFE) of 30 for effective signal amplification. It supports an operating temperature range from -55°C up to 150°C, ensuring durability in harsh environments. The maximum transition frequency is 100 MHz, suitable for high-frequency switching applications.

Configured as a single PNP transistor, it is ideal for amplification and switching in electronic circuits. Its compact dimensions are 2.2 mm length, 1.35 mm width, and 1 mm height, enabling space-saving PCB designs. Meets the automotive standard AEC-Q101, assuring quality for automotive electronics.

Explore our comprehensive range of semiconductors and Bipolar Transistors on EnvMart for your industrial, automotive, and commercial electronics needs.

onsemi Small Signal PNP Transistor, 3-Pin SOT-323, -200 mA, -40 V, 150 mW MMBT3906WT1G
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Frequently Asked Questions

The maximum power dissipation of this transistor is 150 mW, allowing for reliable operation in various applications.

It operates within a temperature range of -55°C to 150°C, making it suitable for harsh environments.

The maximum collector current rating for this transistor is -200 mA, suitable for switching and amplification tasks.

This model has compact dimensions of 2.2 mm in length, 1.35 mm in width, and 1 mm in height, facilitating space-saving PCB designs.

The minimum DC current gain (hFE) of the MMBT3906WT1G is 30, which supports effective signal amplification.

The maximum transition frequency is 100 MHz, making it suitable for high-frequency switching applications.

It is supplied in a 3-pin SOT-323 surface mount package, allowing for efficient PCB space utilization.

The MMBT3906WT1G complies with the automotive standard AEC-Q101, ensuring quality for automotive electronics.

The maximum collector-emitter voltage (Vceo) is -40 V, suitable for various electronic applications.

This model is configured as a single PNP transistor, commonly used for general-purpose amplification and switching.

The maximum emitter-base voltage (VEBO) is -5 V, which is important for its operation in electronic circuits.

Key features include a maximum power dissipation of 150 mW, a minimum DC current gain of 30, and a maximum transition frequency of 100 MHz, among others.

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