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onsemi Small Signal PNP Transistor, 200 mA DC Collector Current, 40 V Collector Emitter Voltage, 6-Pin SOT-363 MBT3906DW1T1G

Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 1.1mm
Length 2.2mm
Model MBT3906DW1T1G
Width 1.35mm
Mount Type Surface
Maximum Operating Temperature 150°C
Package Type SOT-363
Minimum Operating Temperature -55°C
Pin Count 6
Maximum Collector Emitter Voltage Vceo -40V
Minimum DC Current Gain hFE 30
Transistor Polarity PNP
Maximum Emitter Base Voltage VEBO -5V
Maximum Collector Base Voltage VCBO -40V
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 150mW
Maximum DC Collector Current Idc -200mA
Transistor Configuration Isolated
Maximum Transition Frequency ft 1kHz

Key Features

  • This transistor is designed for surface mount applications with an isolated transistor configuration.
  • It features a maximum power dissipation of 150 mW for efficient operation.
  • The device operates reliably between -55°C and 150°C, suitable for automotive standards.
  • It has a minimum DC current gain (hFE) of 30 ensuring stable amplification.
  • Compact dimensions of 2.2 mm length, 1.35 mm width, and 1.1 mm height facilitate space saving PCB design.
  • Automotive qualified to the AEC-Q101 standard ensuring high reliability in automotive environments.
  • Maximum collector base voltage and emitter base voltage ratings are -40 V and -5 V respectively.
  • Featuring a maximum transition frequency of 1 kHz, ideal for small signal amplification.

Product Description

The onsemi MBT3906DW1T1G is a high-performance small signal PNP transistor designed for surface mount applications. It features a 200 mA maximum DC collector current and a collector emitter voltage rating of 40 V, enclosed within a compact 6-Pin SOT-363 package.

This transistor is built with an isolated transistor configuration allowing effective signal control and minimizing interference. It is engineered to dissipate power up to 150 milliwatts ensuring energy efficiency in circuits.

Its operating temperature range from -55°C to 150°C combined with adherence to the AEC-Q101 automotive standard confirms reliability and durability for automotive and industrial applications. The device offers a minimum DC current gain of 30, providing stable performance across various electrical applications.

Dimensionally, the package measures 2.2 mm in length, 1.35 mm in width, and 1.1 mm in height, making it ideal for compact electronic assemblies. The transistor supports a maximum collector base voltage of 40 V and an emitter base voltage of 5 V, suited for low power switching and amplification tasks.

This versatile transistor is particularly suited for use in industrial, automotive, manufacturing, and consumer electronics applications where small signal amplification is required. Its surface mount design simplifies PCB assembly and mass production processes, improving manufacturing efficiency.

This transistor is designed for surface mount applications with an isolated transistor configuration. It features a maximum power dissipation of 150 mW for efficient operation. The device operates reliably between -55°C and 150°C, suitable for automotive standards.

It has a minimum DC current gain (hFE) of 30 ensuring stable amplification. Compact dimensions of 2.2 mm length, 1.35 mm width, and 1.1 mm height facilitate space saving PCB design. Automotive qualified to the AEC-Q101 standard ensuring high reliability in automotive environments.

Maximum collector base voltage and emitter base voltage ratings are -40 V and -5 V respectively. Featuring a maximum transition frequency of 1 kHz, ideal for small signal amplification. Explore the onsemi range of Bipolar Transistors and other semiconductor components on EnvMart for advanced electronic design and manufacturing needs.

onsemi Small Signal PNP Transistor, 200 mA DC Collector Current, 40 V Collector Emitter Voltage, 6-Pin SOT-363 MBT3906DW1T1G
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Frequently Asked Questions

The maximum DC collector current for this model is 200 mA.

The collector-emitter voltage rating for this transistor is -40 V.

This transistor operates reliably between -55°C and 150°C.

The minimum DC current gain (hFE) is 30, ensuring stable amplification.

The SOT-363 package has dimensions of 2.2 mm in length, 1.35 mm in width, and 1.1 mm in height.

The maximum power dissipation for the MBT3906DW1T1G is 150 mW.

This transistor is qualified to the AEC-Q101 automotive standard.

The maximum transition frequency is 1 kHz, making it suitable for small signal amplification.

This model supports surface mounting, facilitating PCB assembly.

The maximum emitter-base voltage (VEBO) rating is -5 V.

The MBT3906DW1T1G features an isolated transistor configuration.

The country of origin for this model is India.

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