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onsemi Transistor 6 A NPN 60 V 4-Pin SOT-223 NSV60601MZ4T1G
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 1.75mm |
| Length | 6.7mm |
| Model | NSV60601MZ4T1G |
| Width | 3.7mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-223 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 4 |
| Maximum Collector Emitter Voltage Vceo | 60V |
| Minimum DC Current Gain hFE | 50 |
| Transistor Polarity | NPN |
| Maximum Emitter Base Voltage VEBO | 6V |
| Maximum Collector Base Voltage VCBO | 100V dc |
| Maximum Power Dissipation Pd | 2W |
| Maximum DC Collector Current Idc | 6A |
| Transistor Configuration | Single |
| Maximum Transition Frequency ft | 1MHz |
| onsemi NSV40301MZ4G NPN Transistor, 3 A, 40 V, 3 + Tab-Pin SOT-223Brand | ON Semiconductor |
Key Features
- This transistor is designed for general purpose applications with a collector current rating of 6 amperes.
- The package type is SOT-223, offering compact size and surface mount capability.
- Maximum power dissipation is rated at 2 watts, ensuring reliable operation in moderate power circuits.
- It features a minimum DC current gain (hFE) of 50 and can operate between temperatures of -55°C to 150°C.
- The transistor has a maximum transition frequency of 1 MHz suitable for switching applications.
- Physical dimensions include length of 6.7 mm, width of 3.7 mm, and height of 1.75 mm.
- The transistor configuration is single with NPN polarity, with maximum collector-base voltage of 100 V dc and emitter-base voltage of 6 V.
Product Description
The onsemi NSV60601MZ4T1G transistor is a high-performance bipolar NPN transistor designed for discrete semiconductor applications in electronic and electrical industries. It supports a maximum DC collector current of 6 A and a maximum collector-emitter voltage of 60 V, making it suitable for medium power amplification and switching tasks.
Packaged in a compact 4-pin SOT-223 surface mount housing, this transistor offers efficient heat dissipation and easy integration into modern PCB designs. The device can dissipate up to 2 watts of power, with a minimum DC current gain (hFE) of 50, ensuring consistent performance across various loads.
Its operational temperature range from -55°C to 150°C supports usage in challenging industrial environments. The transistor exhibits a maximum transition frequency of 1 MHz, appropriate for switching and low-frequency amplification applications.
Dimensions of 6.7 mm length, 3.7 mm width, and 1.75 mm height provide a compact footprint. The device has a single transistor configuration with NPN polarity, a maximum collector-base voltage of 100 V dc, and a maximum emitter-base voltage of 6 V.
This transistor is ideal for applications in power amplification, industrial control, and consumer electronic projects requiring reliable medium power handling and compact design. This transistor is designed for general purpose applications with a collector current rating of 6 amperes.
The package type is SOT-223, offering compact size and surface mount capability. Maximum power dissipation is rated at 2 watts, ensuring reliable operation in moderate power circuits. It features a minimum DC current gain (hFE) of 50 and can operate between temperatures of -55°C to 150°C.
The transistor has a maximum transition frequency of 1 MHz suitable for switching applications. Physical dimensions include length of 6.7 mm, width of 3.7 mm, and height of 1.75 mm. The transistor configuration is single with NPN polarity, with maximum collector-base voltage of 100 V dc and emitter-base voltage of 6 V.
Explore the onsemi range of Bipolar Transistors on EnvMart to find components suited for your electronic design needs in industrial, automotive, or consumer electronics applications.
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Frequently Asked Questions
The maximum collector current rating of this transistor is 6 amperes.
This model is packaged in a compact 4-pin SOT-223 surface mount housing.
The maximum collector-emitter voltage is rated at 60 V.
It can operate within a temperature range of -55°C to 150°C.
The maximum power dissipation is rated at 2 watts.
The minimum DC current gain (hFE) is 50.
The maximum transition frequency is 1 MHz, making it suitable for switching applications.
The dimensions are 6.7 mm in length, 3.7 mm in width, and 1.75 mm in height.
This transistor has a single configuration with NPN polarity.
The maximum collector-base voltage is 100 V dc.
It is suitable for general purpose applications, including power amplification and switching tasks.
The country of origin for this transistor is India.
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