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onsemi PNP Transistor NJT4030PT3G, -3 A Collector Current, -40 V Collector-Emitter Voltage, 4-Pin SOT-223 Package

Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 1.75mm
Length 6.7mm
Model NJT4030PT3G
Width 3.7mm
Mount Type Surface
Maximum Operating Temperature 150°C
Package Type SOT-223
Minimum Operating Temperature -55°C
Pin Count 4
Maximum Collector Emitter Voltage Vceo -40V
Minimum DC Current Gain hFE 100
Transistor Polarity PNP
Maximum Emitter Base Voltage VEBO 6V
Maximum Collector Base Voltage VCBO 40V dc
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 2W
Maximum DC Collector Current Idc -3A
Transistor Configuration Single
Maximum Transition Frequency ft 1MHz

Key Features

  • This transistor features a maximum collector current of -3 A, suitable for moderate power applications.
  • The maximum collector-emitter voltage rating is -40 V, ensuring voltage tolerance for various circuits.
  • It has a surface mount SOT-223 package with 4 pins for easy PCB integration.
  • Maximum power dissipation is 2 W, allowing the transistor to handle reasonable power loads.
  • Designed with PNP polarity and single transistor configuration.
  • Minimum DC current gain (hFE) of 100 supports amplification needs.
  • Operating temperature ranges from -55°C to 150°C for reliable performance in harsh environments.
  • Meets automotive standard AEC-Q101, suitable for automotive and industrial applications.

Product Description

The onsemi NJT4030PT3G is a high-quality PNP bipolar transistor designed for general purpose use in electronic circuits, featuring a maximum DC collector current of -3 A and a collector-emitter voltage rating of -40 V. It comes in a surface mount 4-pin SOT-223 package, facilitating easy PCB mounting and compact design integration.

This transistor offers a maximum power dissipation of 2 W, making it suitable for moderate power switching and amplification tasks. The transistor’s minimum DC current gain (hFE) of 100 ensures efficient amplification in various applications. It is constructed for reliable operation across a wide temperature range from -55°C to 150°C, supporting use in demanding industrial and automotive environments.

With compliance to the AEC-Q101 automotive standard, the NJT4030PT3G transistor meets the stringent requirements necessary for automotive-grade electronics, ensuring durability and enhanced quality. Its transition frequency of 1 MHz supports use in medium frequency circuits, including signal amplification and switching applications.

The compact physical dimensions of 6.7 mm length, 3.7 mm width, and 1.75 mm height make this transistor ideal for space-constrained designs. Its PNP polarity and single transistor configuration provide flexibility for a wide range of circuit topologies.

This transistor is primarily used in industrial, automotive, power switching, and general electronics applications. It enables improved production efficiency when integrated into machinery and devices requiring reliable bipolar transistors.

Maximum DC collector current: -3 A. Maximum collector-emitter voltage: -40 V. SOT-223 surface mount 4-pin package. Maximum power dissipation of 2 W. PNP transistor polarity with single configuration. Minimum DC current gain (hFE) of 100.

Operating temperature range from -55°C to 150°C. Automotive standard compliance: AEC-Q101. Compact dimensions: 6.7 mm x 3.7 mm x 1.75 mm. Maximum transition frequency 1 MHz.

Explore more high-quality Bipolar Transistors and semiconductor components in the Electronics & Electricals category on EnvMart for your industrial, automotive, and electronic circuit needs.

onsemi PNP Transistor NJT4030PT3G, -3 A Collector Current, -40 V Collector-Emitter Voltage, 4-Pin SOT-223 Package
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Frequently Asked Questions

The maximum collector current for this transistor is -3 A.

The collector-emitter voltage rating is -40 V.

This model comes in a surface mount SOT-223 package with 4 pins.

The maximum power dissipation is 2 W, allowing it to handle moderate power loads.

The minimum DC current gain (hFE) is 100, which supports amplification needs.

The operating temperature range is from -55°C to 150°C.

It complies with the AEC-Q101 automotive standard, suitable for automotive applications.

The dimensions are 6.7 mm in length, 3.7 mm in width, and 1.75 mm in height.

The maximum transition frequency is 1 MHz, supporting medium frequency circuits.

This model features a single transistor configuration.

The maximum emitter-base voltage (VEBO) is 6 V.

The maximum collector-base voltage (VCBO) rating is 40 V DC.

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