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Vishay TrenchFET N-Channel MOSFET 30 A 30 V Enhancement Mode 8-Pin PowerPAK 1212 SISA10DN-T1-GE3
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Height | 1.12mm |
| Length | 3.4mm |
| Model | SISA10DN-T1-GE3 |
| Width | 3.4mm |
| Mount Type | Surface |
| Series | TrenchFET |
| Maximum Operating Temperature | 150°C |
| Package Type | PowerPAK 1212 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 30A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 5mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 39W |
| Typical Gate Charge Qg @ Vgs | 34nC |
| Maximum Gate Source Voltage Vgs | -16, +20V |
| Forward Voltage Vf | 0.8V |
Key Features
- Designed for high-efficiency power switching applications.
- Features low on-resistance of 5 milliohms, enhancing performance.
- Supports enhancement mode channel operation.
- Wide operating temperature range from -55°C to 150°C.
- Compact dimensions of 3.4 mm length, 3.4 mm width, and 1.12 mm height.
- Maximum power dissipation of 39 W ensures reliable thermal handling.
- Typical gate charge of 34 nC at Vgs for efficient switching.
- Reliable surface mount design with PowerPAK 1212 package.
Product Description
Vishay SISA10DN-T1-GE3 is a TrenchFET N-Channel MOSFET designed for power and electronic component applications, offering a continuous drain current of 30 A and maximum drain-source voltage of 30 V. The device operates in enhancement mode and is housed in an 8-pin PowerPAK 1212 surface mount package, making it suitable for compact circuit board designs.
This MOSFET features a low maximum drain-source resistance of 5 milliohms to minimize conduction losses and a maximum power dissipation rating of 39 watts, allowing efficient thermal management in demanding industrial and commercial environments. The device's operating temperature range spans from -55°C to 150°C, ensuring reliability in a variety of thermal conditions typically encountered in industrial, power management, and electronic control applications.
Its typical gate charge of 34 nanocoulombs at Vgs facilitates fast switching performance, improving efficiency in applications such as DC-DC converters, motor control, and power regulation. The forward voltage drop of 0.8 V contributes to reduced power loss during operation. Compact dimensions of 3.4 mm by 3.4 mm by 1.12 mm and the surface mount package enable seamless integration into electronic assemblies.
Commonly applied in industrial power electronics, automotive electronics, consumer electronics, and high-efficiency power supply systems, the Vishay SISA10DN-T1-GE3 MOSFET is engineered to deliver reliable performance with easy mounting and high efficiency.
Designed for high-efficiency power switching applications. Low drain-source resistance reduces power loss and heat generation. Enhancement mode operation for controlled switching behavior. Wide operating temperature range ensures durability.
Compact PowerPAK 1212 package supports surface mount assembly. High power dissipation rating allows for robust thermal management. Typical gate charge enables fast and efficient switching. Forward voltage supports energy-efficient conduction.
Explore the Vishay brand range and related MOSFET Semiconductor products on EnvMart for advanced electronic component solutions.
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Frequently Asked Questions
The maximum continuous drain current for this model is 30 A.
The maximum drain-source voltage rating is 30 V.
The typical gate charge at Vgs is 34 nC.
The dimensions of the PowerPAK 1212 package are 3.4 mm in length, 3.4 mm in width, and 1.12 mm in height.
The maximum power dissipation rating is 39 W.
The operating temperature range is from -55°C to 150°C.
This model uses an N-channel type.
The maximum drain-source resistance is 5 milliohms.
The forward voltage drop is 0.8 V.
The pin count for this model is 8.
The maximum gate-source voltage is -16V to +20V.
This MOSFET is designed for surface mount assembly.
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