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onsemi Small Signal PNP Transistor SMMBTA56LT1G, -500 mA, -80 V dc, 3-Pin SOT-23

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onsemi Small Signal PNP Transistor SMMBTA56LT1G, -500 mA, -80 V dc, 3-Pin SOT-23

Name: onsemi Small Signal PNP Transistor SMMBTA56LT1G, -500 mA, -80 V dc, 3-Pin SOT-23
Brand: onsemi
SKU: 369478
Price: 0.07 USD
Availability: InStock

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Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin	India
Brand	onsemi
Height	1.11mm
Length	3.04mm
Model	SMMBTA56LT1G
Width	2.64mm
Mount Type	Surface
Maximum Operating Temperature	150°C
Package Type	SOT-23
Minimum Operating Temperature	-55°C
Pin Count	3
Maximum Collector Emitter Voltage Vceo	-80V dc
Minimum DC Current Gain hFE	100
Transistor Polarity	PNP
Maximum Emitter Base Voltage VEBO	-4V
Maximum Collector Base Voltage VCBO	80V dc
Maximum Power Dissipation Pd	225mW
Maximum DC Collector Current Idc	-500mA
Transistor Configuration	Single
Maximum Transition Frequency ft	100MHz

Key Features

Designed for surface-mount applications with single transistor configuration.
Maximum power dissipation of 225 mW ensures efficient thermal performance.
Minimum DC current gain (hFE) of 100 for reliable amplification.
Wide operating temperature range from -55°C to 150°C supports diverse environments.
Maximum transition frequency of 100 MHz suitable for high-frequency circuits.
Supports maximum collector base voltage of 80 V dc and emitter base voltage of -4 V.
Not automotive qualified; suitable for general electronic and industrial uses.

Product Description

The onsemi SMMBTA56LT1G is a small signal PNP transistor designed for discrete semiconductor applications. Featuring a maximum DC collector current rating of -500 mA and a collector emitter voltage of -80 V dc, it is well-suited for a variety of electronic circuits requiring reliable switching and amplification.

This transistor comes in a compact 3-Pin SOT-23 surface-mount package, enabling efficient PCB space usage in modern electronic devices. Its single transistor configuration, coupled with a minimum DC current gain (hFE) of 100, provides robust performance for signal amplification tasks.

With a maximum power dissipation of 225 mW and a maximum transition frequency of 100 MHz, the SMMBTA56LT1G offers effective thermal management and supports high-frequency operations, making it ideal for communications and signal processing applications.

The device is rated to operate over a wide temperature range from -55°C to 150°C, ensuring stability in industrial, manufacturing, and laboratory environments. Its physical dimensions - length 3.04 mm, width 2.64 mm, and height 1.11 mm - allow for integration in compact circuits.

While this transistor is not automotive standard qualified, it is suitable for general industrial electronics and equipment design requiring dependable bipolar transistor components.

Designed for surface-mount technology with 3-pin SOT-23 package. Maximum DC collector current: -500 mA, collector emitter voltage: -80 V dc. Minimum DC current gain (hFE) of 100 for efficient electronic amplification. Wide operating temperature range from -55°C to 150°C for versatile deployment.

Maximum power dissipation rated at 225 mW. Maximum transition frequency of 100 MHz for high-speed switching. Compact dimensions allow integration into space-constrained devices. Explore the Electronics & Electricals category at EnvMart for more semiconductor components and Bipolar Transistors designed to meet industrial and manufacturing needs.