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onsemi 2 A NPN 40 V DC General Purpose Transistor SOT-23 NSS40201LT1G

Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 1.11mm
Length 3.04mm
Model NSS40201LT1G
Width 2.64mm
Mount Type Surface
Series e2PowerEdge
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -55°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo 40V dc
Minimum DC Current Gain hFE 180
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 6V
Maximum Collector Base Voltage VCBO 40V dc
Maximum Power Dissipation Pd 460mW
Maximum DC Collector Current Idc 2A
Transistor Configuration Single
Maximum Transition Frequency ft 100MHz

Key Features

  • Designed for general purpose applications requiring NPN transistor configuration.
  • Features a compact SOT-23 surface-mount package with 3 pins.
  • Maximum power dissipation of 460 mW ensures efficient performance.
  • Operates from -55°C to 150°C ensuring high temperature reliability.
  • High minimum DC current gain of 180 increases amplification efficiency.
  • Maximum transition frequency of 100 MHz supports medium frequency switching.
  • Suitable for automotive and industrial electronic circuits due to robustness.

Product Description

onsemi NSS40201LT1G is a general purpose NPN bipolar transistor designed for electronic applications requiring up to 2 A collector current and 40 V collector-emitter voltage. Packaged in a compact SOT-23 surface mount format with 3 pins, it offers excellent power dissipation capability of 460 mW, making it suitable for medium power applications in industrial and automotive circuits.

This transistor operates effectively in a wide temperature range between -55°C and 150°C, providing reliability across harsh environmental conditions. It features a minimum DC current gain (hFE) of 180 and a maximum transition frequency (ft) of 100 MHz, which enables efficient switching and amplification in various signal processing tasks.

The device’s small footprint with dimensions of 3.04 mm length, 2.64 mm width, and 1.11 mm height supports compact PCB layouts while maintaining best-in-class electrical performance. Its maximum collector-base and emitter-base voltages of 40 V and 6 V respectively offer safety margins for robust operation.

Ideal for use in automotive electronics and industrial control systems, this transistor provides reliability and consistency. The absence of automotive standard qualification denotes general industrial usage but still meets industrial-grade quality. Packaging ensures ease of automated PCB assembly and production efficiency.

Compact SOT-23 surface mount transistor with 3 pins. High collector current rating of 2 A for versatile power handling. 40 V maximum collector-emitter voltage for medium voltage circuits. Robust temperature operation from -55°C to 150°C.

High minimum DC gain supporting better signal amplification. 460 mW power dissipation enables efficient energy management. Suitable for industrial, automotive, and manufacturing applications.

Explore the extensive range of Bipolar Transistors and electronic components at EnvMart to support your design and manufacturing requirements with top-quality products like the onsemi NSS40201LT1G transistor.

onsemi 2 A NPN 40 V DC General Purpose Transistor SOT-23 NSS40201LT1G
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Frequently Asked Questions

The NSS40201LT1G can handle a maximum collector current of 2 A.

This model has a maximum collector-emitter voltage rating of 40 V DC.

It has a maximum power dissipation of 460 mW, which allows for efficient energy management in applications.

The transistor operates effectively within a temperature range of -55°C to 150°C.

The NSS40201LT1G is packaged in a SOT-23 format with dimensions of 3.04 mm length, 2.64 mm width, and 1.11 mm height.

It features a minimum DC current gain (hFE) of 180, enhancing amplification efficiency.

The maximum transition frequency for this transistor is 100 MHz, suitable for medium frequency switching applications.

This model has a pin count of 3, designed for surface mounting.

It is an NPN bipolar transistor suitable for general-purpose applications.

The maximum collector-base voltage is 40 V DC, and the maximum emitter-base voltage is 6 V.

It is suitable for use in automotive electronics and industrial control systems due to its robust design.

The country of origin for this transistor is India.

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