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onsemi NPN Transistor 500 mA Collector Current 25 V Collector-Emitter Voltage Single Configuration SOT-23 MMBTH10LT3G

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onsemi NPN Transistor 500 mA Collector Current 25 V Collector-Emitter Voltage Single Configuration SOT-23 MMBTH10LT3G

Name: onsemi NPN Transistor 500 mA Collector Current 25 V Collector-Emitter Voltage Single Configuration SOT-23 MMBTH10LT3G
Brand: onsemi
SKU: 369445
Price: 0.06 USD
Availability: InStock

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Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin	India
Brand	onsemi
Height	1.11mm
Length	3.04mm
Model	MMBTH10LT3G
Width	2.64mm
Mount Type	Surface
Maximum Operating Temperature	150°C
Package Type	SOT-23
Minimum Operating Temperature	-55°C
Pin Count	3
Maximum Collector Emitter Voltage Vceo	25V
Minimum DC Current Gain hFE	60
Transistor Polarity	NPN
Maximum Emitter Base Voltage VEBO	25V
Maximum Collector Base Voltage VCBO	30V dc
Maximum Power Dissipation Pd	225mW
Maximum DC Collector Current Idc	500mA
Transistor Configuration	Single
Maximum Transition Frequency ft	100MHz

Key Features

Maximum DC collector current of 500 mA provides efficient switching capability.
Collector-emitter voltage rating of 25 V ensures reliable operation.
Designed for surface mount with SOT-23 package for compact PCB layouts.
Maximum power dissipation of 225 mW supports moderate power applications.
High transition frequency of 100 MHz suitable for RF applications.
Wide operating temperature range from -55°C to 150°C for industrial use.
Minimum DC current gain (hFE) of 60 supports amplification needs.
Three-pin design fits standard bipolar transistor circuit requirements.

Product Description

onsemi MMBTH10LT3G is a high-performance NPN bipolar transistor designed for general purpose amplification and switching applications. It features a maximum DC collector current of 500 mA and a collector-emitter voltage rating of 25 V. Packaged in a compact SOT-23 surface mount package with a 3-pin design, it is ideal for dense PCB layouts in modern electronic designs.

The transistor offers a maximum power dissipation of 225 mW and a high transition frequency of 100 MHz, enabling its use in RF circuits and fast switching applications. With a minimum DC current gain (hFE) of 60, it provides stable amplification performance across its operating range.

Its robust operating temperature range from -55°C to 150°C allows deployment in harsh industrial, automotive, and commercial electronic environments. This transistor supports various industrial and consumer electronics use cases, including signal amplification, switching, and RF applications.

The SOT-23 package size is compact at 3.04 mm length, 2.64 mm width, and 1.11 mm height, facilitating efficient space utilization on PCBs while maintaining performance. Maximum DC collector current of 500 mA for efficient switching.

Collector-emitter voltage rating of 25 V for versatile applications. SOT-23 surface mount package for space-saving device layout. Maximum power dissipation of 225 mW ensures reliability under load. High transition frequency of 100 MHz enables RF applications.

Wide temperature tolerance from -55°C to 150°C for harsh environments. Minimum DC current gain of 60 offers stable amplification. Three-pin NPN transistor configuration supports standard circuit design.

This transistor is suited for industries such as industrial electronics, automotive, communications, consumer electronics, and instrumentation. It is an essential component for electronic assembly, repair, and PCB design where efficiency, size, and performance are critical.

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