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Nexperia Small Signal NPN Bipolar Transistor, 100 mA, 65 V, 6-Pin SOT-363 Package BC846S,115

Category Bipolar Transistors Brand Nexperia Condition New

Specifications

Country of Origin Malaysia
Brand Nexperia
Height 1.1mm
Length 2.2mm
Model BC846S,115
Width 1.35mm
Mount Type Surface
Series BC846S
Maximum Operating Temperature 150°C
Package Type SOT-363
Minimum Operating Temperature -65°C
Pin Count 6
Maximum Collector Emitter Voltage Vceo 65V
Minimum DC Current Gain hFE 110
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 65V
Maximum Collector Base Voltage VCBO 80V
Maximum Power Dissipation Pd 20mW
Maximum DC Collector Current Idc 100mA
Transistor Configuration Isolated
onsemi BC846BDW1T1G Transistor, 100 mA NPN, 65 V, 6-Pin SOT-363Brand onsemi

Key Features

  • Supports maximum DC collector current of 100 mA ensuring reliable performance.
  • Collector-emitter voltage rating of 65 volts suitable for various electronic applications.
  • Compact 6-pin SOT-363 surface mount package ideal for space-constrained circuit boards.
  • High minimum DC current gain (hFE) of 110 for efficient transistor operation.
  • Operating temperature range from -65°C to 150°C ensures durability in harsh environments.
  • Maximum power dissipation of 20 mW to maintain safe thermal limits.
  • NPN transistor polarity for standard switching and amplification functions.
  • Isolated transistor configuration enhances circuit design flexibility.

Product Description

Nexperia BC846S,115 is a small signal NPN bipolar transistor designed for electronic circuits requiring up to 100 mA collector current and 65 V collector-emitter voltage. Packaged in a compact 6-pin SOT-363 surface mount form, this transistor is ideal for space-sensitive PCB layouts.

This transistor features an isolated transistor configuration and a high minimum DC current gain (hFE) of 110, ensuring efficient switching and amplification in low power applications. Its maximum power dissipation rating of 20 mW protects against thermal overload during operation.

The device operates reliably within a wide temperature range from -65°C to 150°C, making it suitable for demanding industrial, automotive, communication, and consumer electronics environments.

Technical dimensions include a length of 2.2 mm, width of 1.35 mm, and height of 1.1 mm, facilitating precise surface mounting on printed circuit boards. The transistor is manufactured in Malaysia and meets industry quality standards.

Supports maximum DC collector current of 100 mA ensuring reliable performance. Collector-emitter voltage rating of 65 volts suitable for various electronic applications. Compact 6-pin SOT-363 surface mount package ideal for space-constrained circuit boards.

High minimum DC current gain (hFE) of 110 for efficient transistor operation. Operating temperature range from -65°C to 150°C ensures durability in harsh environments. Maximum power dissipation of 20 mW to maintain safe thermal limits.

NPN transistor polarity for standard switching and amplification functions. Isolated transistor configuration enhances circuit design flexibility. Precision dimensions of 2.2 mm length, 1.35 mm width, and 1.1 mm height support design accuracy.

Manufactured in Malaysia to maintain quality and reliability standards.

This transistor is widely used in industrial, electronic component manufacturing, automotive electronics, communication devices, and general-purpose circuit designs. EnvMart offers this reliable Nexperia BC846S,115 transistor for enhanced control in your electronic projects and products.

Explore more products in our Bipolar Transistors category.

Nexperia Small Signal NPN Bipolar Transistor, 100 mA, 65 V, 6-Pin SOT-363 Package BC846S,115
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Frequently Asked Questions

The maximum DC collector current for this model is 100 mA, ensuring reliable performance in various applications.

This transistor has a collector-emitter voltage rating of 65 volts, making it suitable for a range of electronic applications.

It is packaged in a compact 6-pin SOT-363 surface mount package, ideal for space-constrained circuit boards.

The minimum DC current gain (hFE) for this transistor is 110, which enhances its efficiency in switching and amplification functions.

This model operates reliably within a temperature range of -65°C to 150°C, suitable for harsh environments.

The dimensions of this transistor are 2.2 mm in length, 1.35 mm in width, and 1.1 mm in height, facilitating precise surface mounting.

The maximum power dissipation for this model is 20 mW, which helps maintain safe thermal limits during operation.

This is an NPN bipolar transistor, suitable for standard switching and amplification functions in electronic circuits.

It features an isolated transistor configuration, which enhances circuit design flexibility.

This transistor is manufactured in Malaysia, adhering to industry quality standards.

The maximum collector-base voltage (VCBO) for this model is 80 volts, providing additional operational safety.

This model is widely used in industrial, automotive, communication devices, and general-purpose circuit designs.

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