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onsemi Low Noise Bipolar NPN Transistor 50 mA, 30 V, 3-Pin SOT-23 MMBT5089LT1G

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onsemi Low Noise Bipolar NPN Transistor 50 mA, 30 V, 3-Pin SOT-23 MMBT5089LT1G

Name: onsemi Low Noise Bipolar NPN Transistor 50 mA, 30 V, 3-Pin SOT-23 MMBT5089LT1G
Brand: onsemi
SKU: 369435
Price: 0.05 USD
Availability: InStock

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Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin	India
Brand	onsemi
Height	1.11mm
Length	3.04mm
Model	MMBT5089LT1G
Width	2.64mm
Mount Type	Surface
Maximum Operating Temperature	150°C
Package Type	SOT-23
Minimum Operating Temperature	-55°C
Pin Count	3
Maximum Collector Emitter Voltage Vceo	30V
Minimum DC Current Gain hFE	400
Transistor Polarity	NPN
Maximum Emitter Base Voltage VEBO	4.5V
Maximum Collector Base Voltage VCBO	25V dc
Maximum Power Dissipation Pd	225mW
Maximum DC Collector Current Idc	50mA
Transistor Configuration	Single
Maximum Transition Frequency ft	20MHz

Key Features

This transistor operates within a temperature range of -55°C to 150°C.
Maximum power dissipation is rated at 225 mW, providing reliable performance under typical use.
Equipped with a high minimum DC current gain (hFE) of 400 for effective amplification.
Offers a maximum transition frequency of 20 MHz, ideal for signal processing and switching.
Designed for surface mounting, simplifying integration into electronic circuits.
Complies with no specific automotive or industry-standard approvals, focusing on general semiconductor applications.
The transistor polarity is NPN, commonly used in switching and amplification roles.
Compact dimensions of 3.04 mm length, 2.64 mm width, and 1.11 mm height support dense PCB layouts.

Product Description

The onsemi MMBT5089LT1G is a low noise bipolar NPN transistor designed for discrete semiconductor applications. Its 3-pin SOT-23 surface-mount package makes it well-suited for compact circuit boards and modern electronics manufacturing.

With a maximum collector-emitter voltage of 30 V and maximum collector current of 50 mA, it is ideal for amplification and switching tasks in devices requiring moderate power handling. The high minimum DC current gain of 400 ensures effective signal amplification, while the maximum power dissipation of 225 mW enables reliable operation under typical load conditions.

This transistor is engineered for operation across a wide temperature range from -55°C to 150°C, ensuring stability and performance in diverse environmental conditions. Its maximum transition frequency of 20 MHz supports high-frequency switching and amplification use cases.

The device is designed without specific automotive certifications, targeting general electronics and industrial applications, such as industrial control systems, consumer electronics, and instrumentation equipment.

Key physical dimensions of 3.04 mm length, 2.64 mm width, and 1.11 mm height facilitate integration on densely populated printed circuit boards, and the surface-mount package type supports automated assembly processes.

This transistor operates within a temperature range of -55°C to 150°C. Maximum power dissipation is 225 mW for reliable function. Offers a high DC current gain of at least 400. Maximum transition frequency of 20 MHz supports high-frequency use.

Compact 3-Pin SOT-23 surface-mount package. NPN transistor polarity for common switching and amplification roles. Maximum collector-emitter voltage of 30 V and collector current of 50 mA. Dimensions: 3.04 mm (L) x 2.64 mm (W) x 1.11 mm (H).

This component is ideal for use in industrial, electronic manufacturing, consumer electronics, communications equipment, and signal processing scenarios. Explore more Bipolar Transistors and semiconductor solutions on EnvMart for your PCB and electronic design needs.