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Nexperia N-Channel Enhancement MOSFET 60 V 310 mA 3-Pin SC-70 2N7002PW,115

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Nexperia N-Channel Enhancement MOSFET 60 V 310 mA 3-Pin SC-70 2N7002PW,115

Name: Nexperia N-Channel Enhancement MOSFET 60 V 310 mA 3-Pin SC-70 2N7002PW,115
Brand: Nexperia
SKU: 369311
Price: 0.07 USD
Availability: InStock

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Category MOSFET Brand Nexperia Condition New

Specifications

Country of Origin	Malaysia
Brand	Nexperia
Height	1mm
Length	2.2mm
Model	2N7002PW,115
Width	1.35mm
Mount Type	Surface
Series	2N7002PW
Maximum Operating Temperature	150°C
Package Type	SC-70
Minimum Operating Temperature	-55°C
Pin Count	3
Automotive Standard	AEC-Q101
Channel Type	N
Maximum Continuous Drain Current Id	310mA
Maximum Drain Source Voltage Vds	60V
Maximum Drain Source Resistance Rds	1.6Ω
Channel Mode	Enhancement
Maximum Power Dissipation Pd	260mW
Typical Gate Charge Qg @ Vgs	0.6nC
Maximum Gate Source Voltage Vgs	-20, +20V
Forward Voltage Vf	1.2V
Nexperia 2N7002PW N-Channel MOSFET, 310 mA, 60 V Enhancement, 3-Pin SC-70Brand	Nexperia

Key Features

Features a 3-pin SC-70 surface-mount package for compact PCB design.
Maximum continuous drain current of 310 mA and drain-source voltage of 60 V.
Low maximum drain-source resistance of 1.6 ohms ensures efficient switching.
Typical gate charge of 0.6 nC allows fast switching performance.
Operates reliably between -55°C to 150°C for broad industrial applications.
Maximum power dissipation rated at 260 mW for low power circuits.
Includes automotive standard compliance AEC-Q101 for high reliability use.
Gate-source voltage tolerance of ±20 V supports robust gate control.

Product Description

Nexperia 2N7002PW,115 N-Channel Enhancement MOSFET is designed for low-power switching applications requiring up to 310 mA continuous drain current and a maximum drain-source voltage of 60 V. Packaged in a compact 3-pin SC-70 surface-mount package, it enables space-saving PCB layouts and efficient thermal management.

This MOSFET delivers a maximum drain-source resistance of 1.6 ohms, ensuring low conduction losses for battery-powered and portable devices. The typical gate charge of 0.6 nC facilitates fast switching to improve overall circuit efficiency and response times.

With operating temperature ranging from -55°C to 150°C, the device ensures reliable performance in harsh industrial, automotive, and consumer electronic environments. Its maximum power dissipation of 260 mW suits low power and signal-level switching roles in equipment such as power management modules, load switches, and electronic controls.

The device meets automotive standard AEC-Q101, highlighting its suitability for high-reliability automotive and industrial applications. The gate-source voltage tolerance of ±20 V provides protection against transient voltage spikes for robust operation.

Compact SC-70 surface-mount package with 3 pins. 310 mA maximum continuous drain current rating. 60 V maximum drain-source voltage for versatile power applications. Low Rds(on) of 1.6 ohms to minimize conduction losses. Fast switching enabled by 0.6 nC gate charge.

Wide temperature range from -55°C to 150°C for industrial use. Maximum power dissipation of 260 mW for low power handling. Automotive-grade AEC-Q101 compliance. Small footprint: 2.2 mm length, 1.35 mm width, 1 mm height.

Gate voltage tolerance ±20 V for secure gate control.

This Nexperia MOSFET is ideally suited for applications in industrial control systems, automotive electronics, consumer devices, and power management circuits. The compact size and robust specifications make it a versatile choice for designers requiring efficient, reliable low-voltage switching components.

Explore EnvMart for additional Nexperia MOSFETs and related semiconductor components to support your electronic design needs.