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onsemi NPN Bipolar Transistor 100 mA 65 V 3-Pin SOT-23 Surface Mount BC846BLT3G

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onsemi NPN Bipolar Transistor 100 mA 65 V 3-Pin SOT-23 Surface Mount BC846BLT3G

Name: onsemi NPN Bipolar Transistor 100 mA 65 V 3-Pin SOT-23 Surface Mount BC846BLT3G
Brand: onsemi
SKU: 368297
Price: 0.04 USD
Availability: InStock

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Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin	India
Brand	onsemi
Height	1.11mm
Length	3.04mm
Model	BC846BLT3G
Width	1.11mm
Mount Type	Surface
Maximum Operating Temperature	150°C
Package Type	SOT-23
Minimum Operating Temperature	-55°C
Pin Count	3
Maximum Collector Emitter Voltage Vceo	65V
Minimum DC Current Gain hFE	200
Transistor Polarity	NPN
Maximum Emitter Base Voltage VEBO	6V
Maximum Collector Base Voltage VCBO	80V
Automotive Standard	AEC-Q101
Maximum Power Dissipation Pd	300mW
Maximum DC Collector Current Idc	100mA
Transistor Configuration	Single
Maximum Transition Frequency ft	100MHz
• MSL	1

Key Features

Designed for linear and switching applications.
Surface mount package suitable for low power circuits.
Maximum power dissipation rating of 300 mW.
High DC current gain with minimum of 200.
Automotive qualified to AEC-Q101 standard.
Wide operating temperature range from -55°C to 150°C.
Offers ESD protection greater than 400 V.
Compact dimensions of 3.04 mm length and 1.11 mm width and height.

Product Description

onsemi BC846BLT3G is a single NPN bipolar transistor designed for general purpose linear and switching applications. It is housed in a compact 3-pin SOT-23 surface mount package tailored for low power electronic circuits.

This device supports a maximum DC collector current of 100 mA and a collector-emitter voltage of 65 V, making it suitable for a wide array of electronic applications including ESD protection, polarity reversal protection, data line protection, inductive load protection, and steering logic circuits. The minimum DC current gain (hFE) is 200 ensuring efficient signal amplification.

The maximum power dissipation is rated at 300 mW, and it features a high maximum collector-base voltage of 80 V. It complies with the AEC-Q101 automotive standard, rendering it appropriate for automotive system designs requiring reliable performance under demanding conditions.

It boasts an extended operating temperature range from -55°C to 150°C and a maximum transition frequency of 100 MHz suitable for high-frequency switching. The device also has a minimum storage moisture sensitivity level (MSL) of 1 and excellent electrostatic discharge (ESD) robustness exceeding 400 V for both human body and machine models.

Physical dimensions include a length of 3.04 mm and height and width of 1.11 mm making it compact for space-constrained designs. The transistor polarity is NPN with single transistor configuration mounted on surface-type packages ideal for automated PCB assembly.

Designed for linear and switching electronic applications. High reliability with automotive AEC-Q101 qualification. Supports up to 100 mA continuous collector current. Strong ESD protection exceeding 400 V. Compact SOT-23 3-pin surface mount package.

Wide operating temperature from -55°C to 150°C. High collector-base voltage tolerance (80 V). Optimized for low power dissipation (300 mW).

This onsemi transistor is ideal for use in industrial, automotive, communication, and consumer electronic applications. Its compact form and robust electrical characteristics enable integration into various semiconductor circuits including amplification, switching, and protection functions.

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