onsemi Small Signal PNP Bipolar Transistor 3 A, 40 V, Surface Mount SOT-223, 4-Pin FZT790A

onsemi FZT790A is a small signal PNP bipolar transistor engineered to handle up to 3 amperes of collector current and withstand collector-emitter voltages up to 40 volts. Packaged in a 4-pin SOT-223 surface mount package, it strikes a balance between compact size and thermal performance. This transistor is ideal for signal amplification, switching, and various low-to-medium power applications in industrial and electronic circuits.

The device operates reliably across a broad temperature range from -55°C to 150°C, making it suitable for harsh environments. Featuring a minimum DC current gain of 150 and a maximum transition frequency of 100 MHz, it offers efficient amplification with stable switching characteristics.

It includes a maximum power dissipation rating of 2 watts, allowing for efficient thermal management during operation. The transistor's robust PNP polarity supports various circuit topologies requiring such configuration.

Physical dimensions of 6.7 mm (length), 7.3 mm (width), and 1.8 mm (height) enable easy integration into printed circuit board designs while maintaining reliable mechanical and electrical connections via its surface mount configuration.

Typical use cases include electronic component assemblies in telecommunications, industrial controls, power management systems, and discrete semiconductor applications. This transistor also suits designs where fairchild semiconductor bipolar transistor alternatives are considered due to its comparable specifications and reliability.

Package contains a single onsemi FZT790A transistor optimized for high performance and reliability in discrete semiconductor applications. This transistor is designed for small signal amplification and switching applications.

It features a maximum collector current of 3 amperes and a collector-emitter voltage of 40 volts. The transistor comes in a compact 4-pin SOT-223 package suitable for surface mounting. It supports a wide temperature range from -55°C to 150°C, ensuring reliable operation in various environments.

The device exhibits a minimum DC current gain (hFE) of 150 and a maximum transition frequency of 100 MHz. It has a maximum power dissipation of 2 watts and a PNP transistor polarity. This transistor's dimensions are 6.7 mm length, 7.3 mm width, and 1.8 mm height.

Suitable for electronic, industrial, and telecommunications applications requiring efficient PNP transistor solutions. Explore more semiconductor and bipolar transistor options on EnvMart for industrial and electronic engineering needs.

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