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DiodesZetex High Voltage NPN Transistor 500 mA 300 V Surface Mount 4-Pin SOT-223 FZT657TA

Category Bipolar Transistor Brand DiodesZetex Condition New

Specifications

Country of Origin India
Brand DiodesZetex
Height 1.65mm
Length 6.55mm
Model FZT657TA
Width 7.1mm
Mount Type Surface
Series FZT657
Maximum Operating Temperature 150°C
Package Type SOT-223
Minimum Operating Temperature -55°C
Pin Count 4
Maximum Collector Emitter Voltage Vceo 300V
Minimum DC Current Gain hFE 10
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 5V
Maximum Collector Base Voltage VCBO 300V
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 2W
Maximum DC Collector Current Idc 500mA
Transistor Configuration Single
Maximum Transition Frequency ft 30MHz

Key Features

  • Maximum collector current of 500 mA for reliable switching.
  • Collector-emitter voltage rated at 300 V for high voltage tolerance.
  • Surface mount package type offers easy PCB integration.
  • 4-pin SOT-223 package with compact dimensions of 6.55 x 7.1 x 1.65 mm.
  • Minimum DC gain (hFE) of 10 ensures effective amplification.
  • Operating temperature range from -55°C to 150°C suitable for harsh environments.
  • Maximum power dissipation of 2 W supports moderate power applications.
  • Automotive grade compliant with AEC-Q101 standard for reliability.

Product Description

DiodesZetex FZT657TA is a high voltage NPN bipolar transistor designed for discrete semiconductor applications requiring robust performance and reliable high voltage switching. This transistor is housed in a compact 4-pin SOT-223 surface mount package measuring 6.55 mm length, 7.1 mm width, and 1.65 mm height, allowing efficient PCB space utilization.

It delivers a maximum DC collector current of 500 mA and withstands collector-emitter voltages up to 300 V, appropriate for industrial, automotive, and electronic circuits involving moderate voltage and power levels.

The device supports a maximum power dissipation of 2 watts, with a minimum DC current gain (hFE) of 10, making it suitable for amplification and switching applications.

Operating reliably over a wide temperature range from -55°C to 150°C, this transistor conforms to the automotive standard AEC-Q101, ensuring high quality and durability in demanding environments.

The device features a single transistor configuration with NPN polarity and is commonly used in power regulation, switching power supplies, and amplification stages in industrial, automotive, and electronic manufacturing sectors.

Maximum DC collector current of 500 mA for dependable switching performance. Collector-emitter voltage rated at 300 V for high voltage applications. Compact 4-pin SOT-223 surface mount package for efficient PCB layout. Minimum DC gain of 10 enhances signal amplification.

Wide operating temperature range from -55°C to 150°C for versatility. Power dissipation capacity of 2 W supports moderate power designs. Compliant with AEC-Q101 automotive standards for reliability.

This transistor is ideal for use in industrial electronics, construction of control systems, automotive electronics, and HVAC equipment. It is designed to enhance production efficiency in machinery and electronic assemblies.

Explore more about semiconductor devices in the Bipolar Transistors category and discover high-quality components from DiodesZetex at EnvMart.

DiodesZetex High Voltage NPN Transistor 500 mA 300 V Surface Mount 4-Pin SOT-223 FZT657TA
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Frequently Asked Questions

The maximum collector current for this model is 500 mA, suitable for reliable switching applications.

This transistor has a collector-emitter voltage rating of 300 V, which allows for high voltage applications.

It comes in a 4-pin SOT-223 surface mount package with dimensions of 6.55 mm in length, 7.1 mm in width, and 1.65 mm in height.

The operating temperature range for this model is from -55°C to 150°C, making it suitable for harsh environments.

The minimum DC current gain (hFE) is 10, which ensures effective amplification in applications.

It supports a maximum power dissipation of 2 W, which is appropriate for moderate power applications.

Yes, this model is compliant with the AEC-Q101 automotive standard, ensuring reliability in automotive applications.

The maximum emitter-base voltage (VEBO) for this transistor is 5 V.

The maximum collector-base voltage (VCBO) for this model is also 300 V.

This device features a single transistor configuration with NPN polarity.

It is suitable for use in power regulation, switching power supplies, and amplification stages in various sectors including industrial and automotive electronics.

The maximum transition frequency (ft) for this model is 30 MHz, which is relevant for high-speed applications.

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