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DiodesZetex General Purpose PNP Transistor 2 A, 20 V, Surface Mount SOT-23 DSS20200L-7
Specifications
| Country of Origin | China |
|---|---|
| Brand | DiodesZetex |
| Height | 1.1mm |
| Length | 3mm |
| Model | DSS20200L-7 |
| Width | 2.5mm |
| Mount Type | Surface |
| Series | DSS20200L |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Maximum Collector Emitter Voltage Vceo | -20V |
| Minimum DC Current Gain hFE | 150 |
| Transistor Polarity | PNP |
| Maximum Emitter Base Voltage VEBO | -7V |
| Maximum Collector Base Voltage VCBO | -20V |
| Automotive Standard | AEC-Q101 |
| Maximum Power Dissipation Pd | 600mW |
| Maximum DC Collector Current Idc | -2A |
| Transistor Configuration | Single |
| Maximum Transition Frequency ft | 100MHz |
Key Features
- This transistor is configured as a single PNP type with maximum power dissipation of 600mW.
- The device operates reliably within a temperature range of -55°C to 150°C.
- The package type is SOT-23 with a compact 3-pin design, ideal for space-constrained applications.
- The minimum DC current gain (hFE) is 150, making it suitable for amplification and switching.
- The maximum transition frequency is 100MHz, providing good high-frequency performance.
- Pin count is 3, with dimensions 3mm length, 2.5mm width, and 1.1mm height.
- The transistor meets Automotive Standard AEC-Q101, ensuring robustness for automotive and industrial uses.
- Its maximum emitter-base voltage is -7V, with a maximum collector-base voltage of -20V.
Product Description
DiodesZetex DSS20200L-7 is a general purpose PNP transistor optimized for surface mount technology with a compact SOT-23 package and 3 pins. It supports a maximum DC collector current of -2A and a collector-emitter voltage of -20V, making it effective for switching and amplification in electronic circuits.
The transistor is designed for industrial, automotive, and general electronic applications where reliable performance across a wide temperature range (-55°C to 150°C) is essential. It features a robust power dissipation capability of 600mW, suitable for medium power switching tasks.
Key electrical parameters include a minimum current gain (hFE) of 150 and a transition frequency (ft) of 100MHz, enabling moderate frequency operation in various signal processing scenarios.
The SOT-23 package dimensions measure 3mm in length, 2.5mm in width, and 1.1mm in height, facilitating easy PCB integration and space efficiency. The device conforms to Automotive Standard AEC-Q101, ensuring it meets automotive industry reliability requirements.
This transistor offers a single PNP configuration suitable for multiple design implementations. Its voltages include a maximum emitter-base voltage of -7V and a collector-base voltage of -20V. Compact 3-pin surface mount design fits various electronic assembly needs.
Wide operating temperature range supports automotive and industrial environments. Reliable maximum power rating of 600mW enables stable switching and amplification performance. Meets international automotive quality standards for enhanced durability.
Designed for use in general electronics, power management, and signal amplification circuits.
Choose this DiodesZetex DSS20200L-7 transistor for efficient, reliable performance in automotive, industrial, and general electronic device manufacturing. Explore more semiconductor components and accessories at EnvMart to meet all your industrial and design needs.
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Frequently Asked Questions
The maximum DC collector current for this transistor is -2A.
It has a maximum power dissipation capability of 600mW.
The SOT-23 package dimensions are 3mm in length, 2.5mm in width, and 1.1mm in height.
The transistor operates reliably within a temperature range of -55°C to 150°C.
The minimum DC current gain (hFE) is 150, making it suitable for amplification and switching applications.
The maximum collector-emitter voltage (Vceo) is -20V.
It meets the Automotive Standard AEC-Q101, ensuring robustness for automotive and industrial applications.
The maximum transition frequency (ft) is 100MHz, providing good high-frequency performance.
The transistor features a compact 3-pin design.
The maximum emitter-base voltage (VEBO) is -7V.
It is configured as a single PNP type transistor.
This model is suitable for general electronics, power management, and signal amplification circuits.
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