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DiodesZetex High Power NPN Transistor, 4 A Collector Current, 40 V Collector-Emitter Voltage, SOT-89 Package DSS4540X-13

Category Semiconductor Brand DiodesZetex Condition New

Specifications

Country of Origin China
Brand DiodesZetex
Height 1.6mm
Length 4.6mm
Model DSS4540X-13
Width 4.25mm
Mount Type Surface
Series DSS4540X
Maximum Operating Temperature 150°C
Package Type SOT-89
Minimum Operating Temperature -55°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo 40V
Minimum DC Current Gain hFE 100
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 6V
Maximum Collector Base Voltage VCBO 40V
Maximum Power Dissipation Pd 2W
Maximum DC Collector Current Idc 4A
Transistor Configuration Single
Maximum Transition Frequency ft 70MHz

Key Features

  • This transistor features a maximum power dissipation of 2 W for reliable performance.
  • It has a minimum DC current gain (hFE) of 100, ensuring efficient amplification.
  • The device operates over a temperature range from -55°C up to 150°C, suitable for industrial environments.
  • The package supports surface mount assembly, making it easier for automated PCB production.
  • The transistor operates at a transition frequency of 70 MHz, suitable for high-frequency applications.
  • It incorporates a single transistor configuration with NPN polarity.
  • The compact size includes dimensions of approximately 4.6 mm length, 4.25 mm width, and 1.6 mm height.
  • The product is manufactured in China and complies with general industrial standards without specific automotive certification.

Product Description

DiodesZetex DSS4540X-13 is a high power NPN transistor designed for discrete semiconductor applications in the electronics industry. It delivers a maximum DC collector current of 4 A and a maximum collector-emitter voltage of 40 V, housed in a 3-pin SOT-89 surface mount package. This configuration enables efficient power handling and integration into compact PCB layouts.

The transistor supports a maximum power dissipation of 2 W, making it suitable for medium power amplification tasks. Its minimum DC current gain (hFE) of 100 ensures stable amplification performance in switching and amplification circuits.

Operating effectively over a wide temperature range from -55°C to 150°C, the DSS4540X-13 is built for reliability in harsh industrial and environmental conditions. The device has a transition frequency of 70 MHz, enabling high-frequency switching and signal processing functionalities.

The single transistor configuration and NPN polarity cater to various circuit designs requiring general purpose NPN transistors. The small form factor with length 4.6 mm, width 4.25 mm, and height 1.6 mm allows dense mounting in electronic assemblies.

This transistor features a maximum power dissipation of 2 W for reliable performance. It has a minimum DC current gain (hFE) of 100, ensuring efficient amplification. The device operates over a temperature range from -55°C up to 150°C, suitable for industrial environments.

The package supports surface mount assembly, making it easier for automated PCB production. The transistor operates at a transition frequency of 70 MHz, suitable for high-frequency applications. It incorporates a single transistor configuration with NPN polarity.

The compact size includes dimensions of approximately 4.6 mm length, 4.25 mm width, and 1.6 mm height. The product is manufactured in China and complies with general industrial standards without specific automotive certification.

Ideal for use in industrial electronics, signal amplification, and switching circuits, this transistor offers robust performance and ease of integration. End users in manufacturing, electronics repair, and prototyping can leverage its reliable specifications.

Explore a wide range of Semiconductor components in the EnvMart catalog for specialized electronic solutions.

DiodesZetex High Power NPN Transistor, 4 A Collector Current, 40 V Collector-Emitter Voltage, SOT-89 Package DSS4540X-13
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Frequently Asked Questions

The maximum collector current for this model is 4 A.

It has a maximum collector-emitter voltage rating of 40 V.

The transistor can handle a maximum power dissipation of 2 W.

It features a minimum DC current gain (hFE) of 100, ensuring efficient amplification.

This transistor operates over a temperature range from -55°C to 150°C.

It operates at a transition frequency of 70 MHz, suitable for high-frequency applications.

This model comes in a SOT-89 surface mount package, supporting automated PCB production.

The dimensions are approximately 4.6 mm in length, 4.25 mm in width, and 1.6 mm in height.

It incorporates a single transistor configuration with NPN polarity.

The product complies with general industrial standards but does not have specific automotive certification.

The maximum emitter-base voltage (VEBO) is 6 V.

This transistor is suitable for use in industrial electronics, signal amplification, and switching circuits.

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