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DiodesZetex Silicon Junction Switching Diode, Single 400 mA 100 V 1.25 V SOT-23 BAS19-7-F

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DiodesZetex Silicon Junction Switching Diode, Single 400 mA 100 V 1.25 V SOT-23 BAS19-7-F

Name: DiodesZetex Silicon Junction Switching Diode, Single 400 mA 100 V 1.25 V SOT-23 BAS19-7-F
Brand: DiodesZetex
SKU: 363526
Price: 0.04 USD
Availability: InStock

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Category Switching Diode Brand DiodesZetex Condition New

Specifications

Country of Origin	China
Brand	DiodesZetex
Height	1.1mm
Length	3mm
Model	BAS19-7-F
Width	1.4mm
Mount Type	Surface
Series	BAS19
Maximum Operating Temperature	150°C
Package Type	SOT-23
Sub Type	Silicon Junction
Minimum Operating Temperature	-65°C
Pin Count	3
Maximum Power Dissipation Pd	250mW
Diode Configuration	Single
Peak Non-Repetitive Forward Surge Current Ifsm	2.5A
Maximum Forward Voltage Vf	1.25V
Peak Reverse Recovery Time trr	4ns
Maximum Forward Current If	400mA
Maximum Peak Reverse Repetitive Voltage Vrrm	100V

Key Features

The diode has a low maximum forward voltage of 1.25 V enhancing efficiency.
It supports peak non-repetitive forward surge current up to 2.5 A.
Package type is compact SOT-23 with three pins for easy PCB integration.
Peak reverse recovery time is extremely fast at 4 ns.
The diode operates reliably within a wide temperature range from -65°C to 150°C.
Max power dissipation is 250 mW suitable for small signal applications.
Its physical dimensions are 1.1 mm height, 3 mm length, and 1.4 mm width.
Suitable for various electronic, semiconductor, and switching applications.

Product Description

DiodesZetex BAS19-7-F is a silicon junction single diode optimized for switching applications, supporting a maximum forward current of 400 mA and peak reverse repetitive voltage of 100 V. The diode comes in a compact SOT-23 surface mount package with three pins, making it ideal for automated PCB insertion and manufacturing processes.

This diode offers a low maximum forward voltage of 1.25 V and a peak reverse recovery time of 4 nanoseconds which ensures rapid switching and minimal power loss in electronic circuits. Its robust design supports a peak non-repetitive forward surge current of up to 2.5 A.

The BAS19-7-F is engineered to operate reliably in extreme environments with an operating temperature range from -65°C to 150°C. It dissipates power of up to 250 mW, making it suitable for small signal switching and other discrete semiconductor applications in industrial, automotive, and consumer electronics sectors.

The physical package measures 3 mm length, 1.4 mm width, and 1.1 mm height, optimized for space-constrained designs and surface mounting technologies. The diode is configured as a single silicon junction device with three pins in a SOT-23 package.

Its fast recovery time and surge current ratings make it ideal for switching circuits. Designed for high reliability in a broad temperature range to suit various industrial and consumer applications. The compact footprint reduces PCB area, facilitating miniaturized circuit designs.

Suitable for use in electronics manufacturing, power management, signal processing, and switching diode applications. Country of Origin is China, and the product condition is New. Explore more Switching Diode solutions and other discrete semiconductor components at EnvMart.