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onsemi High Voltage NPN Transistor, 500 mA Maximum DC Collector Current, 300 V Maximum Collector Emitter Voltage KSP42TA

Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin China
Brand onsemi
Height 4.85mm
Length 4.58mm
Model KSP42TA
Width 3.86mm
Mount Type Through Hole
Series KSP42T
Maximum Operating Temperature 150°C
Package Type TO-92
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RS Stock No. 739-0505Brand: onsemiManufacturers Part No.: KSP42TA
Pin Count 3
Maximum Collector Emitter Voltage Vceo 300V
Minimum DC Current Gain hFE 25
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 6V
Maximum Collector Base Voltage VCBO 300V
Maximum Power Dissipation Pd 625mW
Maximum DC Collector Current Idc 500mA
Transistor Configuration Single

Key Features

  • The transistor has a maximum power dissipation of 625 mW ensuring reliable performance.
  • It features a minimum DC current gain (hFE) of 25 for effective amplification.
  • Designed for through-hole mounting in electronic circuits.
  • Operates reliably up to a maximum temperature of 150°C for industrial use.
  • The KSP42TA transistor offers high voltage blocking capabilities with 300 V maximum collector-base voltage.
  • It has a transistor polarity of NPN, suited for a wide range of bipolar transistor applications.
  • Compact dimensions of approximately 4.85 mm height, 4.58 mm length, and 3.86 mm width make it space-efficient.

Product Description

onsemi KSP42TA is a high voltage NPN bipolar junction transistor (BJT) suitable for discrete semiconductor applications within electronic and industrial equipment. This single transistor in a TO-92 3-pin package supports a maximum DC collector current of 500 mA and a collector-emitter voltage rating of 300 V, making it ideal for high voltage switching and amplification tasks where reliability and thermal stability are critical.

The device features a minimum DC current gain (hFE) of 25 and maximum power dissipation of 625 mW, supporting demanding load conditions. Its maximum operating temperature of 150°C ensures suitability for harsh industrial environments, including power management, signal amplification, and switching circuits.

This transistor’s through-hole mount type allows for straightforward installation on standard PCBs. Its compact physical dimensions of approximately 4.85 mm height, 4.58 mm length, and 3.86 mm width optimize PCB space without sacrificing performance integrity.

The KSP42TA transistor is manufactured in China and designed for long-term stability in electronic control, automotive, and power supply applications where NPN configuration is requisitioned. Its robust voltage ratings and thermal handling make it a dependable choice in semiconductor discrete component design.

The transistor has a maximum power dissipation of 625 mW ensuring reliable performance. It features a minimum DC current gain (hFE) of 25 for effective amplification. Designed for through-hole mounting in electronic circuits.

Operates reliably up to a maximum temperature of 150°C for industrial use. The KSP42TA transistor offers high voltage blocking capabilities with 300 V maximum collector-base voltage. It has a transistor polarity of NPN, suited for a wide range of bipolar transistor applications.

Compact dimensions of approximately 4.85 mm height, 4.58 mm length, and 3.86 mm width make it space-efficient.

Ideal for electronic circuit designers, engineers, and maintenance professionals working in industrial, manufacturing, and electronics sectors requiring trustworthy NPN transistors with high voltage and current ratings.

Browse the Electronics & Electricals category on EnvMart to find a broad range of discrete semiconductors, including bipolars, MOSFETs, and other semiconductors for diverse industrial applications.

Explore more products in our Bipolar Transistors category.

onsemi High Voltage NPN Transistor, 500 mA Maximum DC Collector Current, 300 V Maximum Collector Emitter Voltage KSP42TA
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Frequently Asked Questions

The KSP42TA transistor has a maximum DC collector current of 500 mA.

This model has a maximum collector-emitter voltage rating of 300 V.

It features a minimum DC current gain (hFE) of 25, which is suitable for effective amplification.

The dimensions of this transistor are approximately 4.85 mm in height, 4.58 mm in length, and 3.86 mm in width.

The KSP42TA transistor has a maximum power dissipation of 625 mW.

It operates reliably up to a maximum temperature of 150°C, making it suitable for industrial use.

This transistor is designed for through-hole mounting in electronic circuits.

The KSP42TA is packaged in a TO-92 3-pin configuration.

This model has an NPN transistor polarity, suitable for a wide range of applications.

The maximum collector-base voltage (VCBO) for the KSP42TA is 300 V.

It is suitable for high voltage switching, amplification tasks, and various industrial applications.

The maximum emitter-base voltage (VEBO) for the KSP42TA is 6 V.

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