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onsemi PNP Transistor, Maximum DC Collector Current 3 A, Maximum Collector Emitter Voltage 40 V DC, 8-Pin SOIC NSS40300MDR2G
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 1.75mm |
| Length | 5mm |
| Model | NSS40300MDR2G |
| Width | 4mm |
| Mount Type | Surface |
| Series | e2PowerEdge |
| Maximum Operating Temperature | 150°C |
| Package Type | SOIC |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Maximum Collector Emitter Voltage Vceo | -40V dc |
| Minimum DC Current Gain hFE | 150 |
| Transistor Polarity | PNP |
| Maximum Emitter Base Voltage VEBO | -7V |
| Maximum Collector Base Voltage VCBO | 40V dc |
| Automotive Standard | AEC-Q101 |
| Maximum Power Dissipation Pd | 783mW |
| Maximum DC Collector Current Idc | -3A |
| Transistor Configuration | Isolated |
| Maximum Transition Frequency ft | 100MHz |
Key Features
- Designed for general-purpose PNP transistor applications.
- Maximum power dissipation rating of 783 mW ensures reliable operation.
- Surface mount with SOIC package type for easy PCB integration.
- Automotive standard compliant with AEC-Q101 certification.
- Operating temperature range from -55°C to 150°C allows use in harsh environments.
- Transition frequency up to 100 MHz supports high-speed switching.
- Minimum DC current gain (hFE) of 150 enhances signal amplification.
- Isolated transistor configuration prevents unwanted current leakage.
Product Description
The onsemi NSS40300MDR2G is a high-performance PNP bipolar transistor designed for general-purpose applications requiring robust current and voltage handling capabilities. Featuring a maximum DC collector current of 3 A and a collector emitter voltage rating of 40 V dc, this transistor is ideal for various electronic circuits needing efficient switching and amplification.
Its SOIC package and surface mount technology simplify integration into compact PCB designs, while its compact physical dimensions (height 1.75 mm, length 5 mm, width 4 mm) optimize board space without compromising performance. The device supports a transition frequency of 100 MHz, suitable for high-frequency applications requiring fast response times.
Certified to the automotive industry standard AEC-Q101, the NSS40300MDR2G withstands demanding operational environments, with an operating temperature range from -55°C to 150°C, making it suitable for automotive and industrial electronics.
This transistor provides a minimum DC current gain of 150, ensuring reliable signal amplification with an isolated configuration to prevent current leakage across terminals. Power dissipation is rated at 783 mW, supporting durable and stable operation under various load conditions.
Common applications include power management circuits, switching regulators, and general signal amplification in automotive, industrial, and consumer electronic systems requiring reliable and robust PNP transistor performance.
Designed for general-purpose PNP transistor applications. Maximum power dissipation rating of 783 mW ensures reliable operation. Surface mount with SOIC package type for easy PCB integration. Automotive standard compliant with AEC-Q101 certification.
Operating temperature range from -55°C to 150°C allows use in harsh environments. Transition frequency up to 100 MHz supports high-speed switching. Minimum DC current gain (hFE) of 150 enhances signal amplification. Isolated transistor configuration prevents unwanted current leakage.
Compact dimensions: 1.75 mm height, 5 mm length, and 4 mm width. Explore the onsemi product range and discover dependable semiconductor components for your next electronics project on EnvMart.
Explore more products in our Bipolar Transistors category.
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Frequently Asked Questions
The maximum DC collector current for the NSS40300MDR2G is 3 A.
This model has a maximum collector-emitter voltage rating of 40 V DC.
The maximum power dissipation rating is 783 mW, ensuring reliable operation under various load conditions.
It supports a transition frequency of up to 100 MHz, suitable for high-speed switching applications.
The operating temperature range is from -55°C to 150°C, allowing use in harsh environments.
This transistor has compact dimensions of 1.75 mm in height, 5 mm in length, and 4 mm in width.
It comes in an 8-pin SOIC package type, which facilitates easy surface mount integration on PCBs.
The minimum DC current gain (hFE) is 150, which enhances signal amplification.
Yes, it is compliant with the automotive standard AEC-Q101, making it suitable for automotive applications.
It features an isolated transistor configuration to prevent unwanted current leakage.
Common applications include power management circuits, switching regulators, and general signal amplification in automotive, industrial, and consumer electronics.
The maximum emitter-base voltage (VEBO) is -7 V.
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