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onsemi High Voltage NPN Transistor 12 A 400 V 3-Pin TO-220 FJP13009H2TU
Specifications
| Country of Origin | China |
|---|---|
| Brand | onsemi |
| Height | 31.34mm |
| Length | 10.67mm |
| Model | FJP13009H2TU |
| Width | 4.7mm |
| Mount Type | Through Hole |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | 0°C |
| Pay online using | Or choose to pay later via bank transfer |
| RS Stock No. | 739-0420Brand: onsemiManufacturers Part No.: FJP13009H2TU |
| Pin Count | 3 |
| Maximum Collector Emitter Voltage Vceo | 400V |
| Minimum DC Current Gain hFE | 6 |
| Transistor Polarity | NPN |
| Maximum Emitter Base Voltage VEBO | 9V |
| Maximum Collector Base Voltage VCBO | 700V |
| Maximum Power Dissipation Pd | 100W |
| Maximum DC Collector Current Idc | 12A |
| Transistor Configuration | Single |
Key Features
- Maximum DC collector current of 12 amperes.
- Maximum collector-emitter voltage rating of 400 volts.
- Single transistor configuration with NPN polarity.
- High power dissipation capability of 100 watts.
- Compact TO-220 package with 3 pins for efficient thermal management.
- Operating temperature range from 0°C to 150°C for reliable performance.
- Minimum DC current gain (hFE) of 6 ensuring suitable amplification.
- Mount type suitable for through hole PCB assembly.
Product Description
The onsemi FJP13009H2TU is a high voltage, high current NPN bipolar junction transistor (BJT) designed specifically for demanding power electronic circuits. Featuring a maximum DC collector current of 12 A and a robust collector-emitter voltage rating of 400 V, this transistor offers excellent performance in switching and amplification applications. It comes in a compact 3-pin TO-220 package that facilitates efficient heat dissipation and ease of mounting on through-hole printed circuit boards.
With a maximum power dissipation of 100 W and an operating temperature range from 0°C to 150°C, this transistor is suitable for industrial, laboratory, and commercial power control applications. Its minimum DC current gain (hFE) of 6 ensures reliable amplification, while the maximum collector-base voltage of 700 V and emitter-base voltage of 9 V provide enhanced electrical robustness.
The transistor's dimensions are approximately 31.34 mm in height, 10.67 mm in length, and 4.7 mm in width, making it suitable for a variety of compact power electronics assemblies.
Maximum DC collector current of 12 amperes. Maximum collector-emitter voltage of 400 volts. Single NPN transistor configuration. High power dissipation at 100 watts. Three-pin TO-220 package for through-hole mounting. Operating temperature range from 0°C to 150°C.
Minimum DC current gain of 6. Compact physical dimensions for space-constrained designs. Manufactured in China with onsemi quality standards.
This transistor finds applications in industrial equipment, power supplies, motor controls, and other high-current switching circuits. It provides high reliability and robust electrical characteristics required for modern discrete semiconductor power solutions. Explore the range of onsemi Bipolar Transistors for efficient power management and device control.
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Frequently Asked Questions
The maximum DC collector current of this transistor is 12 amperes.
It has a maximum collector-emitter voltage rating of 400 volts.
This model has a high power dissipation capability of 100 watts.
The operating temperature range for this transistor is from 0°C to 150°C.
It comes in a compact TO-220 package with 3 pins, suitable for through-hole mounting.
The minimum DC current gain (hFE) of this transistor is 6.
The dimensions of this transistor are approximately 31.34 mm in height, 10.67 mm in length, and 4.7 mm in width.
The maximum collector-base voltage (VCBO) is 700 volts.
This transistor is suitable for applications in industrial equipment, power supplies, motor controls, and high-current switching circuits.
The maximum emitter-base voltage (VEBO) is 9 volts.
It has a single NPN transistor configuration.
This transistor is manufactured in China.
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