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onsemi Small Signal PNP Transistor 600 mA 60 V 3-Pin TO-92 KSP2907ATA

Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 20.95mm
Length 5.2mm
Model KSP2907ATA
Width 4.19mm
Mount Type Through Hole
Series KSP2907A
Maximum Operating Temperature 150°C
Package Type TO-92
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RS Stock No. 739-0331Brand: onsemiManufacturers Part No.: KSP2907ATA
Pin Count 3
Maximum Collector Emitter Voltage Vceo -60V
Minimum DC Current Gain hFE 50
Transistor Polarity PNP
Maximum Emitter Base Voltage VEBO -5V
Maximum Collector Base Voltage VCBO -60V
Maximum Power Dissipation Pd 625mW
Maximum DC Collector Current Idc -600mA
Transistor Configuration Single

Key Features

  • Small signal PNP transistor suitable for low power amplification.
  • Maximum DC collector current of 600 mA.
  • Maximum collector-emitter voltage of 60 volts.
  • Through-hole mounting with TO-92 package type.
  • Maximum power dissipation of 625 mW for reliable operation.
  • Minimum current gain (hFE) of 50 ensuring amplification consistency.
  • Maximum operating temperature up to 150°C for industrial environments.
  • Compact dimensions with length 5.2 mm, width 4.19 mm, height 20.95 mm.

Product Description

onsemi KSP2907ATA Small Signal PNP Transistor is a 3-pin TO-92 packaged device designed for various electronics applications requiring low power transistor functionality. It offers a maximum DC collector current of 600 mA and maximum collector-emitter voltage of 60 V, making it reliable for small signal amplification in industrial, laboratory, and commercial electronic circuits.

This transistor features a through-hole mount type, supporting ease of integration on PCBs, with a compact rectangular shape measuring 20.95 mm in height, 5.2 mm in length, and 4.19 mm in width. Its maximum power dissipation is rated at 625 mW, allowing operation under moderate thermal conditions suitable for many control and signal processing circuits.

The device exhibits a minimum DC current gain (hFE) of 50, ensuring stable amplification performance. It supports an operating temperature range up to 150°C, suitable for demanding industrial environments. The PNP polarity transistor configuration is compatible with a wide range of bipolar junction transistor (BJT) applications.

Typical industrial and commercial uses include signal switching, amplification, and electronic control circuits in power connectors, semiconductors assemblies, and discrete component setups. The KSP2907ATA series offers robust performance with well-known onsemi quality and reliability.

Small signal PNP transistor suitable for low power amplification. Maximum DC collector current of 600 mA. Maximum collector-emitter voltage of 60 volts. Through-hole mounting with TO-92 package type. Maximum power dissipation of 625 mW for reliable operation.

Minimum current gain (hFE) of 50 ensuring amplification consistency. Maximum operating temperature up to 150°C for industrial environments. Compact dimensions with length 5.2 mm, width 4.19 mm, height 20.95 mm. 3-pin configuration with single transistor setup.

Transistor polarity PNP suitable for standard circuit designs.

Set contains a single bipolar junction transistor, packaged for through-hole mounting. This product is ideal for engineers and technicians in electronics manufacturing, repair, and research.

Explore more discrete semiconductors and Bipolar Transistors from onsemi at EnvMart for your electronics component needs.

onsemi Small Signal PNP Transistor 600 mA 60 V 3-Pin TO-92 KSP2907ATA
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Frequently Asked Questions

The maximum DC collector current for the KSP2907ATA transistor is 600 mA.

The maximum collector-emitter voltage (Vceo) is 60 V.

This model uses a TO-92 package type for through-hole mounting.

The maximum power dissipation for this transistor is rated at 625 mW.

The dimensions of the KSP2907ATA are 20.95 mm in height, 5.2 mm in length, and 4.19 mm in width.

The minimum DC current gain (hFE) for the KSP2907ATA is 50.

The maximum operating temperature for the KSP2907ATA is up to 150°C.

This model has a PNP transistor configuration suitable for various applications.

The KSP2907ATA is suitable for signal switching, amplification, and electronic control circuits.

The maximum emitter-base voltage (VEBO) for the KSP2907ATA is -5 V.

This transistor has a 3-pin configuration.

The KSP2907ATA is manufactured in India.

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