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Vishay Infrared Photodiode 2 Pins Through Hole T-1 3/4 Package ± 20 ° BPV10NF
Specifications
| Country of Origin | India |
|---|---|
| Diameter | 5mm |
| Brand | Vishay |
| Height | 8.6mm |
| Length | 5.75mm |
| Model | BPV10NF |
| Packaging | Bulk |
| Width | 5.75mm |
| Mount Type | Through Hole |
| Series | BPV10 |
| Short Circuit Current | 50μA |
| Maximum Operating Temperature | 100°C |
| Package Type | T-1 3/4 |
| Minimum Operating Temperature | -40°C |
| Polarity | Forward |
| Operating temperatures | -40 to +100 °C |
| Dark Current | 5nA |
| Open Circuit Voltage | 450mV |
| Standards/Approvals | RoHS Directive 2002/95/EC, WEEE 2002/96/EC |
| Pay online using | Or choose to pay later via bank transfer |
| RS Stock No. | 699-7607Brand: VishayManufacturers Part No.: BPV10NFDistrelec Article No.: 304-36-038 |
| Number of Pins | 2 |
| Typical Fall Time | 2.5ns |
| Wavelength of Peak Sensitivity | 940nm |
| Spectrums Detected | Infrared |
| Breakdown Voltage | 60V |
| Minimum Wavelength Detected | 790nm |
| Maximum Wavelength Detected | 1050nm |
| Angle of Half Sensitivity | ± 20 ° |
Key Features
- The photodiode features a black plastic lens with daylight filter for enhanced performance.
- It detects infrared wavelengths with a peak sensitivity at 940nm.
- Operating temperature range is from -40°C to 100°C ensuring reliability in various environments.
- The device supports through-hole mounting and has 2 pins for electrical connection.
- Offers fast response times with a typical rise and fall time of 2.5ns each.
- Short circuit current rating is 50μA and dark current is low at 5nA to reduce noise.
- Breakdown voltage is rated at 60V, supporting robust electrical operation.
- Compact dimensions of 5.75mm length, 5.75mm width, and 8.6mm height.
Product Description
Vishay BPV10NF Infrared Photodiode, model BPV10NF, is a silicon PIN photodiode optimized for detecting infrared radiation within a wavelength range of 790nm to 1050nm, peaking at 940nm. This device is packaged in a Through Hole T-1 3/4 (5mm) plastic black lens case with a daylight filter to ensure high radiant sensitivity and minimal interference from ambient light. It contains 2 pins suitable for through-hole mounting on circuit boards.
The photodiode operates effectively within a wide temperature range of -40°C to 100°C, allowing use in harsh industrial and commercial environments. It features a fast response time with typical rise and fall times of 2.5 nanoseconds, making it suitable for high-speed IR signal detection applications such as remote control receivers, IR data transmission systems, and sensor modules.
Electrically, the BPV10NF photodiode has a short circuit current of 50μA and a low dark current of 5nA, providing high signal-to-noise ratio. It has an open circuit voltage of 450mV and a breakdown voltage of 60V. The photodiode is polarity forward and is not amplified, preserving signal integrity for custom electronics designs.
The component's compact dimensions of 5.75mm length and width, combined with a height of 8.6mm, allow versatile incorporation into compact designs. Its package complies with RoHS Directive 2002/95/EC and WEEE 2002/96/EC standards, ensuring environmental sustainability and compliance.
The device is designed for high radiant sensitivity and high bandwidth applications. It supports industrial, commercial, and laboratory IR detection and sensing applications. Packaging is bulk, facilitating efficient procurement for manufacturing and assembly processes.
The BPV10NF belongs to the BPV10 series of photodiodes known for reliability and performance.
Its wide operational conditions and precise wavelength detection make it ideal for use in electronic components and semiconductor applications requiring reliable infrared detection. The product is a standard choice in optoelectronics for enhanced IR sensing efficiency.
Explore additional Vishay Photodiode products and other electronics components at EnvMart to find compatible and complementary devices for your designs.
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Frequently Asked Questions
The peak sensitivity wavelength of the BPV10NF photodiode is 940nm, optimized for detecting infrared radiation.
The operating temperature range for the BPV10NF is from -40°C to 100°C, allowing it to function in various environments.
This photodiode has a typical rise and fall time of 2.5 nanoseconds each, enabling fast response for high-speed applications.
The BPV10NF photodiode features 2 pins for electrical connection, suitable for through-hole mounting.
The breakdown voltage of the BPV10NF is rated at 60V, supporting robust electrical operation.
The dimensions of the BPV10NF are 5.75mm in length, 5.75mm in width, and 8.6mm in height.
This model supports through-hole mounting, making it easy to integrate into circuit boards.
The dark current rating for the BPV10NF is low at 5nA, which helps reduce noise in applications.
The BPV10NF complies with the RoHS Directive 2002/95/EC and WEEE 2002/96/EC standards for environmental sustainability.
The short circuit current rating of the BPV10NF is 50μA, providing a high signal-to-noise ratio.
The BPV10NF detects infrared wavelengths within the range of 790nm to 1050nm.
The BPV10NF is packaged in bulk, which facilitates efficient procurement for manufacturing and assembly processes.
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