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STMicroelectronics NPN Power Transistor 8 A, 80 V, TO-252 Surface Mount MJD44H11T4

Category Power Transistor Brand STMicroelectronics Condition New

Specifications

Country of Origin India
Brand STMicroelectronics
Height 2.38mm
Length 6.7mm
Model MJD44H11T4
Width 10.1mm
Mount Type Surface
Maximum Operating Temperature 150°C
Package Type TO-252
Minimum Operating Temperature 0°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo 80V
Minimum DC Current Gain hFE 40
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 5V
Maximum Collector Base Voltage VCBO 80V
Maximum Power Dissipation Pd 20W
Maximum DC Collector Current Idc 8A
Transistor Configuration Single

Key Features

  • This transistor features a single configuration with an NPN polarity.
  • It has a minimum DC current gain (hFE) of 40 for efficient switching.
  • The maximum power dissipation is rated at 20 W, enabling robust performance.
  • Operating temperature ranges from 0°C to 150°C for versatile industrial applications.
  • The package dimensions are 6.7 mm in length, 10.1 mm in width, and 2.38 mm in height.
  • Designed with 3 pins in a compact DPAK configuration for surface mounting.
  • The maximum collector base voltage and emitter base voltage are 80 V and 5 V respectively.
  • Ideal for power switching, amplification, and industrial semiconductor circuits.

Product Description

STMicroelectronics MJD44H11T4 is a high-performance NPN power transistor with a maximum DC collector current of 8 A and a collector emitter voltage of 80 V. This transistor comes in a TO-252 (DPAK) surface mount package, designed for efficient heat dissipation and compact PCB integration in power electronic circuits.

The device features a single transistor configuration with NPN polarity and a minimum DC current gain (hFE) of 40, ensuring reliable switching and amplification performance. With a maximum power dissipation of 20 W and an operating temperature range from 0°C up to 150°C, it is suitable for demanding environments including industrial, manufacturing, and consumer electronics applications.

Physical package dimensions are 6.7 mm length, 10.1 mm width, and 2.38 mm height with three pins, facilitating straightforward surface mounting and compatibility with automated assembly lines. The maximum collector base voltage (VCBO) and emitter base voltage (VEBO) are 80 V and 5 V respectively, providing robust voltage withstand capabilities.

This transistor is well-suited for applications such as power amplifiers, switching regulators, motor control, and general-purpose amplification in industrial and electronic systems. Its compact form factor and reliable performance make it an essential component in power management and discrete semiconductor designs.

This transistor features a single configuration with an NPN polarity. It has a minimum DC current gain (hFE) of 40 for efficient switching. The maximum power dissipation is rated at 20 W, enabling robust performance. Operating temperature ranges from 0°C to 150°C for versatile industrial applications.

The package dimensions are 6.7 mm in length, 10.1 mm in width, and 2.38 mm in height. Designed with 3 pins in a compact DPAK configuration for surface mounting. The maximum collector base voltage and emitter base voltage are 80 V and 5 V respectively.

Ideal for power switching, amplification, and industrial semiconductor circuits. Explore more semiconductor Power Transistors and related electronic components available at EnvMart for advanced industrial and commercial applications.

STMicroelectronics NPN Power Transistor 8 A, 80 V, TO-252 Surface Mount MJD44H11T4
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Frequently Asked Questions

The maximum collector emitter voltage (Vceo) for this model is 80 V.

This transistor has a maximum power dissipation rating of 20 W.

The minimum DC current gain (hFE) for this transistor is 40.

The package dimensions are 6.7 mm in length, 10.1 mm in width, and 2.38 mm in height.

The operating temperature range for this transistor is from 0°C to 150°C.

This model features a 3-pin configuration.

It is designed for surface mounting in a compact DPAK configuration.

This transistor is suitable for applications such as power amplifiers, switching regulators, and motor control.

The maximum DC collector current (Idc) is rated at 8 A.

The maximum emitter base voltage (VEBO) is 5 V.

This model has an NPN polarity configuration.

The country of origin for this transistor is India.

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