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| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 2.38mm |
| Length | 6.7mm |
| Model | MJD44H11T4 |
| Width | 10.1mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | 0°C |
| Pin Count | 3 |
| Maximum Collector Emitter Voltage Vceo | 80V |
| Minimum DC Current Gain hFE | 40 |
| Transistor Polarity | NPN |
| Maximum Emitter Base Voltage VEBO | 5V |
| Maximum Collector Base Voltage VCBO | 80V |
| Maximum Power Dissipation Pd | 20W |
| Maximum DC Collector Current Idc | 8A |
| Transistor Configuration | Single |
STMicroelectronics MJD44H11T4 is a high-performance NPN power transistor with a maximum DC collector current of 8 A and a collector emitter voltage of 80 V. This transistor comes in a TO-252 (DPAK) surface mount package, designed for efficient heat dissipation and compact PCB integration in power electronic circuits.
The device features a single transistor configuration with NPN polarity and a minimum DC current gain (hFE) of 40, ensuring reliable switching and amplification performance. With a maximum power dissipation of 20 W and an operating temperature range from 0°C up to 150°C, it is suitable for demanding environments including industrial, manufacturing, and consumer electronics applications.
Physical package dimensions are 6.7 mm length, 10.1 mm width, and 2.38 mm height with three pins, facilitating straightforward surface mounting and compatibility with automated assembly lines. The maximum collector base voltage (VCBO) and emitter base voltage (VEBO) are 80 V and 5 V respectively, providing robust voltage withstand capabilities.
This transistor is well-suited for applications such as power amplifiers, switching regulators, motor control, and general-purpose amplification in industrial and electronic systems. Its compact form factor and reliable performance make it an essential component in power management and discrete semiconductor designs.
This transistor features a single configuration with an NPN polarity. It has a minimum DC current gain (hFE) of 40 for efficient switching. The maximum power dissipation is rated at 20 W, enabling robust performance. Operating temperature ranges from 0°C to 150°C for versatile industrial applications.
The package dimensions are 6.7 mm in length, 10.1 mm in width, and 2.38 mm in height. Designed with 3 pins in a compact DPAK configuration for surface mounting. The maximum collector base voltage and emitter base voltage are 80 V and 5 V respectively.
Ideal for power switching, amplification, and industrial semiconductor circuits. Explore more semiconductor Power Transistors and related electronic components available at EnvMart for advanced industrial and commercial applications.
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