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Toshiba Switching Diode 85 V 300 mA Surface Mount SOT-346 3-Pin 1SS181(TE85L,F)

Category Diode Brand Toshiba Condition New

Specifications

Country of Origin Japan
Brand Toshiba
Height 1.1mm
Length 2.9mm
Model 1SS181(TE85L,F)
Width 1.5mm
Mount Type Surface
Series 1SS181
Maximum Operating Temperature 125°C
Package Type SOT-346 (SC-59)
Minimum Operating Temperature -55°C
Standards/Approvals RoHS
Pin Count 3
Automotive Standard AEC-Q101
Maximum Continuous Forward Current If 300mA
Peak Reverse Repetitive Voltage Vrrm 85V
Diode Configuration Common Anode
Rectifier Type Switching
Peak Reverse Current Ir 500nA
Peak Non-Repetitive Forward Surge Current Ifsm 2A
Maximum Forward Voltage Vf 1.2V
Peak Reverse Recovery Time trr 4ns

Key Features

  • Maximum continuous forward current is 300 mA ensuring reliable switching performance.
  • Peak reverse repetitive voltage of 85 V supports robust diode operation.
  • Common anode diode configuration supports standard circuit integration.
  • Compact SOT-346 (SC-59) package dimensions of 2.9 mm length, 1.5 mm width, and 1.1 mm height.
  • Operates over a wide temperature range from -55°C to 125°C for versatility.
  • Fast peak reverse recovery time of 4 ns enhances switching efficiency.
  • Low peak reverse current of 500 nA minimizes leakage losses.
  • Complies with RoHS and AEC-Q101 automotive standards for environmental and quality assurance.

Product Description

Toshiba 1SS181(TE85L,F) is a general-purpose switching diode designed for electronic and power semiconductor applications. It features a surface mount package type SOT-346 (SC-59) with 3 pins, ideal for compact PCB layouts. This diode supports a maximum continuous forward current of 300 mA and a peak reverse repetitive voltage of 85 V.

The device operates reliably across an extensive temperature range from -55°C to 125°C, making it suitable for automotive and industrial environments. Its common anode diode configuration and low maximum forward voltage of 1.2 V optimize switching efficiency in circuits.

With a peak non-repetitive forward surge current of 2 A and a quick peak reverse recovery time of 4 ns, it ensures high-speed switching essential for power management and signal processing. The low peak reverse current of only 500 nA reduces leakage and improves performance stability.

Physically compact, the diode measures 2.9 mm in length, 1.5 mm in width, and 1.1 mm in height, facilitating space saving in circuit design. It complies with RoHS and AEC-Q101 automotive quality standards, ensuring compliance with environmental regulations and robustness for automotive applications.

This diode is manufactured in Japan, guaranteeing consistent quality and reliability. It is typically used in consumer electronics, automotive electronics, power supplies, and switching regulator circuits.

Maximum continuous forward current is 300 mA ensuring reliable switching performance. Peak reverse repetitive voltage of 85 V supports robust diode operation. Common anode diode configuration supports standard circuit integration.

Compact SOT-346 (SC-59) package dimensions of 2.9 mm length, 1.5 mm width, and 1.1 mm height. Operates over a wide temperature range from -55°C to 125°C for versatility. Fast peak reverse recovery time of 4 ns enhances switching efficiency.

Low peak reverse current of 500 nA minimizes leakage losses. Complies with RoHS and AEC-Q101 automotive standards for environmental and quality assurance. Manufactured in Japan with consistent high-quality standards. Explore Toshiba semiconductors and switching Diodes in the Electronics & Electricals category at EnvMart for industrial, automotive, and consumer applications.

Toshiba Switching Diode 85 V 300 mA Surface Mount SOT-346 3-Pin 1SS181(TE85L,F)
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Frequently Asked Questions

The maximum continuous forward current for this diode is 300 mA, ensuring reliable switching performance.

The peak reverse repetitive voltage of this model is 85 V, which supports robust diode operation.

The SOT-346 package measures 2.9 mm in length, 1.5 mm in width, and 1.1 mm in height.

This diode operates over a wide temperature range from -55°C to 125°C, making it versatile for various applications.

The peak reverse recovery time for this model is 4 ns, which enhances switching efficiency.

This diode features a common anode configuration, which supports standard circuit integration.

The peak reverse current is 500 nA, which minimizes leakage losses.

This diode complies with the AEC-Q101 automotive standard, ensuring quality assurance for automotive applications.

The maximum forward voltage for this model is 1.2 V.

This model is classified as a switching rectifier, suitable for electronic and power semiconductor applications.

This diode is manufactured in Japan, ensuring consistent quality and reliability.

The diode complies with RoHS standards, ensuring it meets environmental regulations.

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