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onsemi Small Signal PNP Transistor 60 V 800 mA 3-Pin SOT-23 BSR16
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 1.2mm |
| Length | 3.12mm |
| Model | BSR16 |
| Width | 2.7mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Maximum Collector Emitter Voltage Vceo | -60V |
| Minimum DC Current Gain hFE | 50 |
| Transistor Polarity | PNP |
| Maximum Emitter Base Voltage VEBO | 5V |
| Maximum Collector Base Voltage VCBO | 60V |
| Maximum Power Dissipation Pd | 350mW |
| Maximum DC Collector Current Idc | -800mA |
| Transistor Configuration | Single |
| Maximum Transition Frequency ft | 200MHz |
Key Features
- Small signal PNP bipolar transistor designed for efficient switching.
- Maximum collector current of 800 mA ensuring moderate power handling.
- Collector-emitter voltage rating of 60 volts for reliable operation.
- Compact surface-mount SOT-23 package with 3 pins.
- Maximum power dissipation of 350 mW for thermal stability.
- Minimum DC current gain (hFE) value of 50 for amplification effectiveness.
- Operating temperature range from -55°C to 150°C for versatility in environments.
- High-frequency transition frequency of 200 MHz enabling swift switching.
Product Description
onsemi model BSR16 is a small signal PNP transistor designed for use in electronic components, power, and connectors. It supports a maximum DC collector current of 800 mA and can tolerate a maximum collector-emitter voltage of 60 V. The device is housed in a compact 3-pin SOT-23 surface mount package optimized for space-saving printed circuit boards.
This transistor offers a minimum DC current gain (hFE) of 50 and supports a maximum power dissipation of 350 mW. It operates efficiently within a temperature range of -55°C to 150°C and features a high transition frequency of 200 MHz, making it suitable for high-speed switching applications.
The maximum collector base voltage is rated at 60 V, and the maximum emitter base voltage is 5 V. The physically compact dimensions are approximately 3.12 mm in length, 2.7 mm in width, and 1.2 mm in height, providing ease of integration in various electronic devices and circuits.
onsemi BSR16 transistors are used extensively in industrial, electronic, and commercial circuit designs that require reliable small signal PNP transistors with moderate current and voltage ratings. Their surface mount packaging and robust specifications make them ideal for automated assembly processes in electronics manufacturing.
Small signal PNP bipolar transistor designed for efficient switching. Maximum collector current of 800 mA ensuring moderate power handling. Collector-emitter voltage rating of 60 volts for reliable operation. Compact surface-mount SOT-23 package with 3 pins.
Maximum power dissipation of 350 mW for thermal stability. Minimum DC current gain (hFE) value of 50 for amplification effectiveness. Operating temperature range from -55°C to 150°C for versatility in environments. High-frequency transition frequency of 200 MHz enabling swift switching.
Single transistor configuration suitable for discrete electronic applications. Robust transistor polarity as PNP type for circuit design flexibility. Explore high-quality Bipolar Transistors and discrete semiconductors on EnvMart for advanced electronic design and manufacturing needs.
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Frequently Asked Questions
The maximum collector current for the BSR16 transistor is 800 mA, allowing for moderate power handling in various applications.
The collector-emitter voltage rating of the BSR16 is 60 V, ensuring reliable operation in electronic circuits.
The BSR16 is housed in a compact SOT-23 package with 3 pins, optimized for surface mounting.
This model operates efficiently within a temperature range of -55°C to 150°C, making it versatile for various environments.
The maximum power dissipation for the BSR16 transistor is 350 mW, which contributes to its thermal stability.
The BSR16 has a minimum DC current gain (hFE) value of 50, which is important for amplification effectiveness.
The transition frequency of this model is 200 MHz, enabling swift switching for high-speed applications.
The dimensions of the BSR16 are approximately 3.12 mm in length, 2.7 mm in width, and 1.2 mm in height.
The BSR16 uses a single transistor configuration, suitable for discrete electronic applications.
The maximum emitter-base voltage (VEBO) for the BSR16 is 5 V, which is critical for its operation in circuits.
The BSR16 transistor is manufactured in India, reflecting its origin in the semiconductor industry.
The BSR16 is a PNP type transistor, providing flexibility in circuit design for various applications.
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