onsemi 100 mA NPN Bipolar Transistor, 60 V, 3-Pin SOT-23 MMBT2484LT1G

The onsemi MMBT2484LT1G is a single NPN bipolar transistor designed for low noise operation and general purpose amplification and switching tasks. It features a maximum DC collector current of 100 mA and a maximum collector emitter voltage rating of 60 V, making it suitable for medium voltage, low power electronic circuits.

Encapsulated in a 3-pin SOT-23 surface mount package, this component offers a compact footprint ideal for dense PCB layouts. With a minimum DC current gain (hFE) of 250, it provides efficient current amplification. The transistor can dissipate up to 300 mW of power within its maximum operating temperature up to 150°C, allowing reliable use in moderately harsh environments.

This device’s maximum transition frequency is 1 MHz, making it suitable for applications requiring moderate switching speeds such as signal processing and small signal amplification.

Low noise NPN bipolar transistor optimized for audio and signal amplification. 100 mA maximum collector current for moderate load applications. 60 V maximum collector emitter voltage for medium voltage tolerance. Compact 3-pin SOT-23 surface mount package for space-saving circuit design.

Minimum DC current gain (hFE) of 250 for effective current amplification. Max power dissipation of 300 mW to ensure thermal stability. Operational temperature range up to 150° Celsius for robust reliability. Supports switching frequencies up to 1 MHz for signal and low power RF applications.

Physical dimensions 3.04 mm (L) x 1.4 mm (W) x 2.64 mm (H) for compact installations. Compliance with RoHS directives but no additional automotive standards.

This transistor is ideal for use in industrial, electronic component manufacturing, instrumentation, and low power switching or amplification in consumer electronics. Its small size and surface mount design facilitate modern PCB assemblies.

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