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onsemi Darlington Transistor NPN 1.2 A 30 V SOT-23 Package Surface Mount 3-Pin BCV27

Category Darlington Transistor Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 0.93mm
Length 2.92mm
Model BCV27
Mount Type Surface
Series BCV27
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -55°C
Pin Count 3
Maximum Continuous Collector Current Ic 1.2A
Maximum Collector Emitter Voltage Vceo 30V
Number of Elements per Chip 1
Minimum DC Current Gain hFE 4000
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 10V
Maximum Collector Emitter Saturation Voltage VceSAT 1V
Maximum Collector Base Voltage VCBO 40V
Maximum Collector Cut-off Current 0.0001mA
onsemi BCV27 1 Darlington Transistor NPN, 1.2 A 30 V HFE 4000, 3-Pin SOT-23

Key Features

  • Features a high current gain hFE of 4000 for efficient amplification.
  • Encapsulated in a compact SOT-23 package with surface mount type and 3 pins.
  • Operating temperature ranges from -55°C to 150°C for reliability across environments.
  • Maximum emitter base voltage (VEBO) is 10 V ensuring robust performance.
  • Collector saturation voltage (VceSAT) max 1 V for lower power loss.
  • Maximum collector base voltage (VCBO) is rated at 40 V.
  • Measures 2.92 mm in length and 0.93 mm in height enabling compact PCB design.
  • Designed as a single element chip transistor with NPN polarity.

Product Description

onsemi BCV27 is a high-gain Darlington NPN transistor designed for discrete semiconductor applications requiring reliable and efficient switching and amplification performance. With a maximum continuous collector current of 1.2 A and collector emitter voltage rating of 30 V, this device operates efficiently within electrical circuits requiring moderate power handling.

Encased in a miniature SOT-23 surface-mount package, the BCV27 transistor features a 3-pin configuration facilitating integration into compact assemblies and modern printed circuit boards.

The transistor offers a notably high DC current gain (hFE) of 4000, making it ideal for signal amplification and switching in consumer electronics, industrial control, and automotive applications.

Designed to function reliably over a wide temperature range from -55°C to 150°C, it supports performance stability in harsh environments. Key electrical limits include a maximum emitter base voltage of 10 V, a collector base voltage of 40 V, and a saturation voltage of 1 V, all critical parameters for designing robust electronic circuits.

The device measures a length of 2.92 mm and a height of 0.93 mm, supporting space-saving circuit designs without sacrificing thermal efficiency. High current gain of 4000 enables efficient signal amplification. SOT-23 surface mount package with 3 pins for easy PCB integration.

Collector current up to 1.2 A suitable for various electronic applications. Wide operating temperature range from -55°C to 150°C for durability. Robust voltage ratings ensure stability under load conditions. Compact form factor supports modern electronic assembly demands.

This new onsemi BCV27 transistor is suitable for use in industrial, consumer electronics, automotive, and laboratory applications where efficient semiconductor switching and amplification are needed. Explore more Darlington Transistors and related components on EnvMart for your design needs.

onsemi Darlington Transistor NPN 1.2 A 30 V SOT-23 Package Surface Mount 3-Pin BCV27
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Frequently Asked Questions

The maximum continuous collector current for this model is 1.2 A.

The maximum collector emitter voltage rating is 30 V.

The minimum DC current gain (hFE) is 4000, which allows for efficient amplification.

This model measures 2.92 mm in length and 0.93 mm in height.

The operating temperature range is from -55°C to 150°C, ensuring reliability in various environments.

It is encapsulated in a compact SOT-23 surface mount package with a 3-pin configuration.

The maximum collector base voltage (VCBO) is rated at 40 V.

The maximum emitter base voltage (VEBO) is 10 V.

The maximum collector emitter saturation voltage (VceSAT) is 1 V, which helps reduce power loss.

This model contains 1 element per chip.

It is suitable for use in industrial, consumer electronics, automotive, and laboratory applications requiring efficient switching and amplification.

The transistor polarity of this model is NPN.

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