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onsemi Darlington Transistor NPN, 1.2 A, 30 V, hFE 4000, 3-Pin SOT-23 BCV27

Category Darlington Transistor Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 0.93mm
Length 2.92mm
Model BCV27
Mount Type Surface
Series BCV27
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -55°C
Pin Count 3
Maximum Continuous Collector Current Ic 1.2A
Maximum Collector Emitter Voltage Vceo 30V
Number of Elements per Chip 1
Minimum DC Current Gain hFE 4000
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 10V
Maximum Collector Emitter Saturation Voltage VceSAT 1V
Maximum Collector Base Voltage VCBO 40V
Maximum Collector Cut-off Current 0.0001mA
onsemi BCV27 1 Darlington Transistor NPN, 1.2 A 30 V HFE 4000, 3-Pin SOT-23

Key Features

  • High current gain with minimum DC current gain hFE of 4000.
  • Compact, surface mount SOT-23 package designed for efficient space usage.
  • Maximum collector-base voltage rating of 40 V ensures robust operation.
  • Operating temperature range extends from -55°C to 150°C for versatile application.
  • Low saturation voltage (1 V maximum) to minimize power loss.
  • Designed as an NPN transistor suitable for switching and amplification.
  • Offers a maximum emitter-base voltage of 10 V for reliable performance.
  • Measures 2.92 mm in length and 0.93 mm in height for compact circuit board integration.

Product Description

onsemi BCV27 is a Darlington NPN transistor engineered for high gain and efficient performance in various electronic circuit applications. It features a maximum continuous collector current of 1.2 A and a maximum collector-emitter voltage rating of 30 V, ensuring reliable switching under moderate power conditions. The transistor is housed in a compact 3-pin SOT-23 surface mount package, ideal for space-constrained designs.

With a minimum DC current gain (hFE) of 4000, the BCV27 excels in amplification tasks requiring high gain figures. Its robust voltage ratings include a maximum collector-base voltage of 40 V and emitter-base voltage of 10 V, providing strong electrical endurance and protection against transient conditions.

The transistor's operating temperature range from -55°C up to 150°C enables use in harsh environmental conditions typical in industrial, automotive, and consumer electronics. The low maximum collector-emitter saturation voltage at 1 V helps minimize power dissipation, contributing to energy-efficient circuit designs.

The compact physical dimensions of 2.92 mm in length and 0.93 mm in height make it well-suited for dense printed circuit board layouts. Additionally, the very low maximum collector cut-off leakage current of 0.0001 mA reduces standby power consumption in sensitive electronic applications.

High current gain with minimum DC current gain hFE of 4000. Compact SOT-23 surface mount package for easy board integration. Maximum continuous collector current of 1.2 A supports moderate loads. Wide operating temperature range from -55°C to 150°C ensures durability.

Low saturation voltage of 1 V enhances energy efficiency. Robust voltage ratings up to 40 V collector-base and 10 V emitter-base. Extremely low leakage current at 0.0001 mA prevents energy waste. Suitable for industrial, automotive, and consumer electronic applications.

This onsemi BCV27 transistor is ideal for circuit designers requiring a high-gain Darlington Transistor solution with reliable electrical and thermal characteristics. Its versatility makes it applicable in power amplification, switching circuits, and signal processing modules within industrial and commercial electronics sectors.

Browse more semiconductor and transistor components on EnvMart for comprehensive electronic solutions in your design projects.

onsemi Darlington Transistor NPN, 1.2 A, 30 V, hFE 4000, 3-Pin SOT-23 BCV27
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Frequently Asked Questions

The maximum continuous collector current for this model is 1.2 A.

It comes in a compact SOT-23 surface mount package.

The minimum DC current gain (hFE) for the BCV27 is 4000.

The maximum collector-emitter voltage rating is 30 V, while the maximum collector-base voltage rating is 40 V.

This model operates within a temperature range of -55°C to 150°C.

The height is 0.93 mm and the length is 2.92 mm, making it suitable for compact circuit designs.

The maximum emitter-base voltage (VEBO) is 10 V.

The maximum collector-emitter saturation voltage is 1 V, which helps minimize power dissipation.

The maximum collector cut-off current is 0.0001 mA, which reduces standby power consumption.

This transistor has a total of 3 pins.

The country of origin for the BCV27 is India.

It is suitable for applications in power amplification, switching circuits, and signal processing in various electronic devices.

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