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ams OSRAM Infrared Photodiode, 60 ° Angle of Half Sensitivity, Surface DIP Package BPW 34 FAS-Z

Category Photodiode Brand ams OSRAM Condition New

Specifications

Country of Origin India
Brand ams OSRAM
Height 1.2mm
Length 4.5mm
Model BPW 34 FAS-Z
Packaging Tape & Reel
Width 4mm
Mount Type Surface
Short Circuit Current 25μA
Maximum Operating Temperature 100°C
Package Type DIP
Minimum Operating Temperature -40°C
Polarity Reverse
Dark Current 2nA
Open Circuit Voltage 330mV
Standards/Approvals RoHS
Number of Pins 2
Typical Fall Time 20ns
Wavelength of Peak Sensitivity 880nm
Spectrums Detected Infrared
Breakdown Voltage 16V
Minimum Wavelength Detected 730nm
Maximum Wavelength Detected 1100nm
Angle of Half Sensitivity 60 °

Key Features

  • Detects infrared spectrums with a peak sensitivity wavelength of 880nm.
  • Compact DIP package with surface mount type ensuring versatile PCB assembly.
  • Features low dark current of 2nA for high signal integrity.
  • Operates efficiently within temperature range of -40°C to 100°C.
  • Has a breakdown voltage rating of 16V for reliable operation.
  • Fast response with typical rise and fall time of 20ns each.
  • Package includes 2 pins with reverse polarity configuration.
  • Suitable for applications such as photointerrupters, IR remote controls, and automotive sensors.

Product Description

ams OSRAM BPW 34 FAS-Z Infrared Photodiode utilizes a surface DIP package with a 60 ° half sensitivity angle, optimized for infrared light detection around 880nm wavelength. This photodiode is engineered for accurate and rapid detection of infrared signals and is housed in a compact DIP form factor suitable for a variety of electronics assemblies.

The device features a radiant sensitive area of 2.65 x 2.65 mm² designed to enhance light reception efficiency. Its detection capability spans from 730nm to 1100nm wavelength, making it ideal for a range of industrial and consumer infrared sensing applications including photointerrupters, infrared remote controls, automotive sensors, and headset devices.

With low dark current of 2nA and short circuit current of 25μA, the photodiode ensures a clean and reliable signal output under diverse environmental conditions. The component operates stably between -40°C to 100°C and complies with RoHS standards, ensuring environmental and safety compliance.

The typical rise and fall times are 20ns, supporting fast signal processing in applications requiring quick response times. Furthermore, the device offers a breakdown voltage of 16V and an open circuit voltage of 330mV, suitable for varied circuit designs.

The BPW 34 FAS-Z's reverse polarity and 2-pin configuration supports straightforward integration into existing systems and surface mounting processes. It is supplied in tape and reel packaging to facilitate automated assembly and production efficiencies.

This infrared photodiode is well-suited for industrial, laboratory, telecommunications, automotive, and consumer electronics sectors requiring precise infrared light detection components.

Detects infrared spectrums with a peak wavelength sensitivity of 880nm. Operates over a wide environmental temperature range from -40°C to 100°C. Packaging ensures efficient handling with tape and reel format. Fast response times of 20ns rise and fall times promote high-speed sensing.

Complies with RoHS to meet environmental health and safety standards. Compact surface DIP package with 2 pins enables versatile mounting options. Low dark current reduces noise and improves detection accuracy. Robust breakdown voltage rating of 16V ensures durability in circuits.

Explore the full range of reliable Photodiodes at EnvMart to meet demanding electronic component needs.

ams OSRAM Infrared Photodiode, 60 ° Angle of Half Sensitivity, Surface DIP Package BPW 34 FAS-Z
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Frequently Asked Questions

The peak sensitivity wavelength of this photodiode is 880nm, optimized for infrared light detection.

This model operates efficiently within a temperature range of -40°C to 100°C.

The photodiode features a low dark current of 2nA, which helps in maintaining high signal integrity.

The dimensions of the surface DIP package are 4.5mm in length, 4mm in width, and 1.2mm in height.

The breakdown voltage rating for this photodiode is 16V, ensuring reliable operation in various circuit designs.

This photodiode has typical rise and fall times of 20ns each, supporting fast signal processing.

This model is configured with 2 pins and features a reverse polarity configuration for easy integration.

It is suitable for applications such as photointerrupters, infrared remote controls, and automotive sensors.

The open circuit voltage for this photodiode is 330mV, making it suitable for various circuit designs.

This model can detect wavelengths from 730nm to 1100nm, covering a broad infrared spectrum.

The photodiode is supplied in tape and reel packaging, facilitating automated assembly and production efficiencies.

Yes, it complies with RoHS standards, ensuring it meets environmental and safety regulations.

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