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onsemi Small Signal PNP Transistor 500 mA 150 V 3-Pin SOT-23 MMBT5401LT1G

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onsemi Small Signal PNP Transistor 500 mA 150 V 3-Pin SOT-23 MMBT5401LT1G

Name: onsemi Small Signal PNP Transistor 500 mA 150 V 3-Pin SOT-23 MMBT5401LT1G
Brand: onsemi
SKU: 341479
Price: 0.05 USD
Availability: InStock

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Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin	India
Brand	onsemi
Height	1.11mm
Length	3.04mm
Model	MMBT5401LT1G
Width	1.4mm
Mount Type	Surface
Maximum Operating Temperature	150°C
Package Type	SOT-23
Minimum Operating Temperature	-55°C
Pin Count	3
Maximum Collector Emitter Voltage Vceo	-150V
Minimum DC Current Gain hFE	50
Transistor Polarity	PNP
Maximum Emitter Base Voltage VEBO	5V
Maximum Collector Base Voltage VCBO	160V
Automotive Standard	AEC-Q101
Maximum Power Dissipation Pd	300mW
Maximum DC Collector Current Idc	-500mA
Transistor Configuration	Single
Maximum Transition Frequency ft	300MHz

Key Features

Supports surface mount with SOT-23 package type.
Designed for single transistor configuration.
Maximum power dissipation of 300 mW ensuring reliable operation.
High transition frequency of 300 MHz for efficient switching.
Wide operating temperature range from -55°C to 150°C.
Automotive qualified to AEC-Q101 standard for robustness.
Minimum DC current gain (hFE) of 50 for stable amplification.
Maximum collector-base voltage of 160 V and emitter-base voltage of 5 V.

Product Description

onsemi MMBT5401LT1G is a small signal PNP bipolar transistor designed to provide up to 500 mA continuous collector current and with a maximum collector-emitter voltage rating of 150 V. This transistor is configured as a single transistor and is incorporated in a 3-pin SOT-23 surface mount package, suitable for compact PCBs and surface-mount technology applications.

Its maximum power dissipation is 300 mW, making it suitable for low power signal amplification and switching tasks in various electronic circuits. The device supports high-frequency operations with a transition frequency (ft) of 300 MHz, allowing efficient performance in high-speed switching applications.

The transistor operates reliably across a broad temperature range from -55°C to 150°C, fulfilling demanding environments including automotive applications, as it complies with the automotive AEC-Q101 qualification standard. Its compact physical dimensions of 3.04 mm length, 1.4 mm width, and 1.11 mm height facilitate easy installation in dense electronic assemblies.

The MMBT5401LT1G offers a minimum DC current gain (hFE) of 50, ensuring effective signal amplification. It withstands a maximum collector-base voltage (VCBO) of 160 V and a maximum emitter-base voltage (VEBO) of 5 V, providing robustness in voltage handling.

Supports surface mount with SOT-23 package type. Designed for single transistor configuration. Maximum power dissipation of 300 mW. High transition frequency of 300 MHz. Wide operating temperature range from -55°C to 150°C.

Automotive qualified to AEC-Q101 standard. Compact dimensions: 3.04 mm length, 1.4 mm width, and 1.11 mm height. Minimum DC current gain of 50. Maximum collector-base voltage of 160 V and emitter-base voltage of 5 V.

This transistor is ideal for use in industrial, automotive, and consumer electronics applications where reliable signal switching and amplification at low power levels are required. Common uses include signal processing circuits, driver stages, and voltage amplification components in electronic devices.

Explore our range of Bipolar Transistors for diverse electronic component needs on EnvMart for quality and performance.