Vishay N-Channel MOSFET 6.2 A 600 V Enhancement Mode 3-Pin TO-220 IRFBC40PBF

Vishay IRFBC40PBF N-Channel MOSFET is a high-performance semiconductor designed to meet demanding applications in industrial, power management, and electronic circuit environments. It is housed in a 3-pin TO-220 through-hole package, which provides ease of mounting and reliable mechanical integrity.

With a continuous drain current rating of 6.2 A and a maximum drain-source voltage of 600 V, this MOSFET is suitable for switching and amplification in power electronic devices. It features a low drain-source resistance of 1.2 ohms, which minimizes conduction losses and enhances overall efficiency.

The device supports a maximum power dissipation of 125 W, enabling it to handle significant power levels in industrial circuits while maintaining stable operation within its temperature range from -55°C to 150°C. Typical gate charge at Vgs is 60 nC, facilitating fast switching with controlled gate drive requirements.

The enhancement channel mode operation and forward voltage of 1.5 V make this MOSFET reliable for dynamic electronic applications. It also includes protection with a maximum gate-source voltage rating from -20 V to +20 V, preventing gate damage under transient conditions.

Maximum continuous drain current of 6.2 A. Maximum drain-source voltage rated at 600 V. TO-220 package with through-hole mount and 3 pins. Low drain-source resistance of 1.2 Ω for efficient conduction. Power dissipation capability of up to 125 W.

Wide operating temperature range of -55°C to 150°C. Typical gate charge: 60 nC at Vgs. Enhancement mode channel type for on-state control. Gate-source voltage limits of -20 V to +20 V for protection. This MOSFET is widely used in industrial power supplies, motor controls, and electronic load applications requiring reliable switching and power efficiency.

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