onsemi Transistor, 600 mA NPN, 40 V, Small Signal Bipolar, 3-Pin SOT-23 MMBT4401LT3G

onsemi MMBT4401LT3G is a small signal NPN bipolar transistor engineered for electronic and electrical applications requiring efficient switching and amplification under moderate current and voltage conditions.

The device supports a maximum DC collector current (Idc) of 600 mA and a maximum collector-emitter voltage (Vceo) of 40 V, making it suitable for low power switching and amplification circuits.

Its SOT-23 package allows surface mounting on PCBs for compact and automated assembly processes typical in industrial, laboratory, and consumer electronics manufacturing.

This transistor features a minimum DC current gain (hFE) of 20 and a maximum power dissipation (Pd) of 225 mW, supporting stable operation with a maximum transition frequency (ft) of 100 MHz.

Reliable across a wide temperature range (-55°C to 150°C), it assures robust performance in environments including industrial control systems, signal processing, and general-purpose amplification circuits.

Maximum collector current 600 mA ensures reliable switching. Maximum collector-emitter voltage 40 V allows operation in moderate voltage circuits. Compact SOT-23 package for surface mount technology. Minimum current gain of 20 supports effective amplification.

Wide operating temperature range from -55°C to 150°C. Maximum power dissipation of 225 mW suits low power applications. Transition frequency up to 100 MHz supports high-frequency signal processing. Three-pin configuration for easy circuit integration.

Single transistor NPN configuration.

onsemi transistors like MMBT4401LT3G are widely used in various sectors including industrial automation, consumer electronics, telecommunications, and instrumentation, due to their reliability and performance characteristics.

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