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Nexperia MOSFET 10.3 A, 30 V, TO-247 Package, Through Hole Mount GAN041-650WSBQ
Specifications
| Country of Origin | India |
|---|---|
| Brand | Nexperia |
| Model | GAN041-650WSBQ |
| Mount Type | Through Hole |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Maximum Continuous Drain Current Id | 10.3A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 13.6mΩ |
| Maximum Power Dissipation Pd | 81W |
| Maximum Gate Source Voltage Vgs | 20V |
Key Features
- The device features a maximum continuous drain current of 10.3 A.
- It supports a maximum drain-source voltage of 30 V for effective switching.
- The package type is TO-247 with a through-hole mounting design.
- Maximum drain-source resistance is low at 13.6 milliohms to optimize conduction.
- Power dissipation rating of up to 81 W enables robust operation.
- Operational temperature range spans from -55°C minimum to 175°C maximum.
- Maximum gate-source voltage tolerance is 20 V providing gate robustness.
- Designed with ultra-low reverse recovery charge for efficiency in switching.
Product Description
The Nexperia GAN041-650WSBQ is a cutting-edge MOSFET combining gallium nitride (GaN) technology and silicon MOSFET advancement for enhanced reliability and high performance in power electronics. Packaged in a TO-247 through-hole configuration, this device ensures effective heat dissipation and mechanical durability in demanding industrial environments.
This GaN FET is a normally-off device featuring a maximum continuous drain current of 10.3 A and can withstand drain-source voltages up to 30 V, making it suitable for various power control applications. Its extremely low drain-source resistance of 13.6 milliohms minimizes conduction losses to improve system efficiency.
With a maximum power dissipation of 81 W, the device tolerates heavy loads and is designed for operation across a wide temperature range from -55°C to 175°C, accommodating harsh operating conditions. The robust gate oxide withstands gate-source voltages up to ±20 V, ensuring gate durability under transient conditions.
The MOSFET incorporates ultra-low reverse recovery charge to reduce switching losses, aiding in high-efficiency designs such as bridgeless totem-pole PFC, PV inverters, UPS systems, and servo motor drives. Its high gate threshold voltage (+4 V) enhances immunity to gate bounce, ensuring stable switching performance.
Maximum continuous drain current Id: 10.3 A. Maximum drain-source voltage Vds: 30 V. Package type: TO-247 with through-hole mount. Maximum drain-source resistance Rds(on): 13.6 mΩ. Maximum power dissipation Pd: 81 W. Operational temperature: -55°C to 175°C.
Maximum gate-source voltage Vgs: ±20 V. GaN HEMT H2 technology combined with silicon MOSFET. Designed for industrial switching converters and motor drives.
This MOSFET is well suited for industrial, data communication, and manufacturing power modules requiring high reliability and high switching speeds. Designers benefit from its rugged construction and advanced semiconductor technology that reduce energy loss and thermal stress.
Discover more high-performance semiconductor solutions and explore the full range of MOSFETs at EnvMart for your specialized industrial and electronic needs.
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Frequently Asked Questions
The maximum continuous drain current for the Nexperia GAN041-650WSBQ is 10.3 A.
This model can withstand a maximum drain-source voltage of 30 V.
The device is packaged in a TO-247 configuration with a through-hole mounting design.
It has a maximum power dissipation rating of up to 81 W.
The operational temperature range spans from -55°C to 175°C.
The maximum gate-source voltage tolerance is ±20 V.
The maximum drain-source resistance is 13.6 milliohms.
It is designed for industrial switching converters, motor drives, and applications requiring high reliability and high switching speeds.
Its extremely low drain-source resistance of 13.6 milliohms minimizes conduction losses, improving system efficiency.
This model combines gallium nitride (GaN) technology with silicon MOSFET advancement for enhanced performance.
The robust gate oxide withstands gate-source voltages up to ±20 V, providing durability under transient conditions.
The country of origin for this MOSFET is India.
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