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| Country of Origin | India |
|---|---|
| Brand | Microchip |
| Model | MSC080SMA120B4 |
| Mount Type | Through Hole |
| Series | MSC080SMA120B4 |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 4 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 140A |
| Maximum Drain Source Voltage Vds | 12V |
| Maximum Drain Source Resistance Rds | 8Ω |
| Maximum Power Dissipation Pd | 1.6W |
| Typical Gate Charge Qg @ Vgs | 64nC |
| Maximum Gate Source Voltage Vgs | 2V |
| Forward Voltage Vf | 1.8V |
The Microchip MSC080SMA120B4 is a high-performance N-Channel MOSFET designed for electronic and power engineering applications requiring efficient switching and high current handling capability. It supports a maximum continuous drain current of 140 A and a drain-source voltage rating of 12 V, making it ideal for low-voltage, high-current environments.
Its 4-Pin TO-247 package enables through-hole mounting, facilitating robust mechanical and thermal management on printed circuit boards.
This MOSFET features a typical gate charge of 64 nC at Vgs, aiding in fast switching speeds and reduced switching losses. Its maximum operating junction temperature of 175°C and low internal gate resistance ensure stable performance and reliability even under strenuous operating conditions.
The device incorporates a forward voltage of 1.8 V and a maximum drain-source resistance of 8 Ω, balancing performance and efficiency in power delivery circuits. Its superior avalanche ruggedness and stable body diode make it suitable for applications demanding high avalanche energy tolerance.
RoHS compliance confirms its adherence to environmental regulations, supporting safer disposal and use in green electronics manufacturing. Features a maximum continuous drain current of 140 A. Supports 12 V maximum drain-source voltage.
Through-hole mounting in TO-247 package. Low typical gate charge of 64 nC. Stable operation up to 175°C junction temperature. Low internal gate resistance enabling fast switching. Forward voltage of 1.8 V with 8 Ω drain-source resistance.
Superior avalanche ruggedness and reliable body diode. RoHS compliant for environmental safety.
This N-Channel MOSFET by Microchip is suitable for industrial, electronic, and power management applications including converters, motor control, and power switching circuits. Its design allows for enhanced performance and reduced total cost of ownership in high voltage, high reliability settings.
Explore more about power MOSFETs and semiconductor solutions available at EnvMart for your industrial and laboratory needs.
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