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Microchip N-Channel MOSFET, 140 A Continuous Drain Current, 12 V Drain Source Voltage, 4-Pin TO-247 Package MSC080SMA120B4

Category MOSFET Brand Microchip Condition New

Specifications

Country of Origin India
Brand Microchip
Model MSC080SMA120B4
Mount Type Through Hole
Series MSC080SMA120B4
Maximum Operating Temperature 175°C
Package Type TO-247
Minimum Operating Temperature -55°C
Standards/Approvals RoHS
Pin Count 4
Channel Type N
Maximum Continuous Drain Current Id 140A
Maximum Drain Source Voltage Vds 12V
Maximum Drain Source Resistance Rds 8Ω
Maximum Power Dissipation Pd 1.6W
Typical Gate Charge Qg @ Vgs 64nC
Maximum Gate Source Voltage Vgs 2V
Forward Voltage Vf 1.8V

Key Features

  • Features a maximum continuous drain current of 140 A for high current applications.
  • Supports a maximum drain-source voltage of 12 V suitable for low-voltage circuits.
  • Utilizes a through-hole mount type with a standard TO-247 package for easy PCB integration.
  • Has a low typical gate charge of 64 nC ensuring fast switching speeds.
  • Stable operation up to 175°C junction temperature for reliability in harsh environments.
  • Offers low internal gate resistance and superior avalanche ruggedness for durable performance.
  • Equipped with a forward voltage of 1.8 V and low drain-source resistance of 8 Ω.
  • Complies with RoHS standards, promoting environmental safety.

Product Description

The Microchip MSC080SMA120B4 is a high-performance N-Channel MOSFET designed for electronic and power engineering applications requiring efficient switching and high current handling capability. It supports a maximum continuous drain current of 140 A and a drain-source voltage rating of 12 V, making it ideal for low-voltage, high-current environments.

Its 4-Pin TO-247 package enables through-hole mounting, facilitating robust mechanical and thermal management on printed circuit boards.

This MOSFET features a typical gate charge of 64 nC at Vgs, aiding in fast switching speeds and reduced switching losses. Its maximum operating junction temperature of 175°C and low internal gate resistance ensure stable performance and reliability even under strenuous operating conditions.

The device incorporates a forward voltage of 1.8 V and a maximum drain-source resistance of 8 Ω, balancing performance and efficiency in power delivery circuits. Its superior avalanche ruggedness and stable body diode make it suitable for applications demanding high avalanche energy tolerance.

RoHS compliance confirms its adherence to environmental regulations, supporting safer disposal and use in green electronics manufacturing. Features a maximum continuous drain current of 140 A. Supports 12 V maximum drain-source voltage.

Through-hole mounting in TO-247 package. Low typical gate charge of 64 nC. Stable operation up to 175°C junction temperature. Low internal gate resistance enabling fast switching. Forward voltage of 1.8 V with 8 Ω drain-source resistance.

Superior avalanche ruggedness and reliable body diode. RoHS compliant for environmental safety.

This N-Channel MOSFET by Microchip is suitable for industrial, electronic, and power management applications including converters, motor control, and power switching circuits. Its design allows for enhanced performance and reduced total cost of ownership in high voltage, high reliability settings.

Explore more about power MOSFETs and semiconductor solutions available at EnvMart for your industrial and laboratory needs.

Microchip N-Channel MOSFET, 140 A Continuous Drain Current, 12 V Drain Source Voltage, 4-Pin TO-247 Package MSC080SMA120B4
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Frequently Asked Questions

It has a maximum continuous drain current of 140 A, making it suitable for high current applications.

This model supports a maximum drain-source voltage of 12 V, suitable for low-voltage circuits.

It comes in a TO-247 package type, which allows for through-hole mounting on printed circuit boards.

The typical gate charge is 64 nC at Vgs, which contributes to fast switching speeds.

It can operate at a maximum junction temperature of 175°C, ensuring reliability in harsh environments.

The forward voltage is 1.8 V, which is relevant for power delivery circuits.

It features a maximum drain-source resistance of 8 Ω, balancing performance and efficiency.

The minimum operating temperature is -55°C, while the maximum is 175°C.

This MOSFET has a pin count of 4, suitable for various circuit designs.

Yes, it complies with RoHS standards, promoting environmental safety in its use and disposal.

It is suitable for applications including converters, motor control, and power switching circuits.

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