Microchip N-Channel MOSFET 140 A, 12 V, 4-Pin TO-247 MSC035SMA170B4

Microchip MSC035SMA170B4 is a high-performance N-Channel MOSFET designed for power-switching applications demanding high current capacity and fast switching capability. This device supports a maximum continuous drain current of 140 A and a maximum drain-source voltage of 12 V, making it suitable for a broad range of power management circuits.

Housed in a 4-pin TO-247 through-hole package, it enables efficient mounting and secure mechanical connection. The MOSFET boasts low internal gate resistance, resulting in rapid switching speeds and minimal switching losses. Its maximum gate-source voltage is rated at 2 V, with a forward voltage drop of just 1.8 V, ensuring efficient conduction with reduced power dissipation.

The device is engineered to operate reliably at junction temperatures up to 175°C, supporting demanding industrial and automotive environments. It features superior avalanche ruggedness, contributing to enhanced durability under transient overload conditions. This MOSFET meets RoHS compliance requirements, aligning with environmental and safety standards.

Key characteristics include a maximum drain-source resistance of 8 Ω and a typical gate charge of 178 nC at the gate-source voltage, which facilitate effective power management in switching applications. Its robust construction and stable performance make it ideal for use in industrial, automotive, HVAC, and manufacturing power electronics systems.

Microchip's MSC035SMA170B4 offers a reliable solution for high voltage, high current applications where efficiency and durability are critical. This product is widely supported by technical documentation and design resources, including 3D models and schematic footprints for PCB design.

Features low capacitance and low gate charge for fast switching and high efficiency. Includes a stable operation at high junction temperatures up to 175°C. Equipped with a 4-pin TO-247 through-hole package for easy mounting and integration.

Offers superior avalanche ruggedness and a reliable body diode for enhanced durability. Compliant with RoHS standards ensuring environmental safety. Maximum drain-source resistance of 8 Ω and forward voltage of 1.8 V optimize power dissipation.

Typical gate charge at Vgs is 178 nC facilitating low gate drive losses. Designed for power applications requiring robust performance and long operational life. Explore more Microchip MOSFETs at EnvMart for various industrial and electronic applications.