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Nexperia N-Channel Enhancement Mode MOSFET 11.4 A 30 V Surface Mount 8-Pin MLPAK33 PXN9R0-30QLJ
Specifications
| Country of Origin | India |
|---|---|
| Brand | Nexperia |
| Model | PXN9R0-30QLJ |
| Mount Type | Surface |
| Maximum Operating Temperature | 150°C |
| Package Type | MLPAK33 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 11.4A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 13.6mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 12.5W |
| Maximum Gate Source Voltage Vgs | 20V |
Key Features
- Supports maximum continuous drain current of 11.4 A for robust power handling.
- Designed with a maximum drain-source voltage rating of 30 V.
- Features low Rds(on) resistance of 13.6 mΩ to optimize efficiency.
- Utilizes enhancement mode operation for precise switching control.
- Packaged in MLPAK33 surface mount package for compact PCB design.
- Maximum gate-source voltage is 20 V for reliable gate drive compatibility.
- Operational temperature range extends from -55°C to 150°C for diverse environments.
- Maximum power dissipation of 12.5 W enables effective thermal management.
Product Description
Nexperia PXN9R0-30QLJ is an N-Channel enhancement mode MOSFET designed for electronic applications requiring efficient switching and power management. It supports a maximum continuous drain current of 11.4 A and a maximum drain-source voltage of 30 V. Housed in a compact MLPAK33 (3.3 x 3.3 mm footprint) surface mount package with 8 pins, it integrates trench MOSFET technology for low on-resistance and enhanced performance.
This MOSFET is suitable for a wide range of industrial, electronic, and power management applications, including DC-DC converters, motor control, power supplies, and automotive electronics. Its robust operating temperature range from -55°C to 150°C ensures reliable function in demanding environments.
The device features an enhancement channel mode, allowing for logic-level compatibility and efficient switching. With a maximum gate-source voltage rating of 20 V and maximum power dissipation of 12.5 W, it supports strong gate drive control and thermal resilience.
Supports maximum continuous drain current of 11.4 A for robust power handling. Designed with a maximum drain-source voltage rating of 30 V. Features low Rds(on) resistance of 13.6 mΩ to optimize efficiency. Utilizes enhancement mode operation for precise switching control.
Packaged in MLPAK33 surface mount package for compact PCB design. Maximum gate-source voltage is 20 V for reliable gate drive compatibility. Operational temperature range extends from -55°C to 150°C for diverse environments.
Maximum power dissipation of 12.5 W enables effective thermal management. Contains 8 pins supporting flexible surface mount PCB assembly. Employs trench MOSFET technology for superior electrical performance. This Nexperia MOSFET is compliant with standard industrial requirements but does not have automotive or special approvals.
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Frequently Asked Questions
The maximum continuous drain current for this model is 11.4 A, allowing for robust power handling in various applications.
This MOSFET has a maximum drain-source voltage rating of 30 V, making it suitable for applications that require this voltage level.
It features a low Rds(on) resistance of 13.6 mΩ, which helps to optimize efficiency in power management applications.
The operational temperature range extends from -55°C to 150°C, allowing it to function reliably in diverse environments.
The maximum power dissipation for this unit is 12.5 W, enabling effective thermal management during operation.
It is packaged in a compact MLPAK33 surface mount package, which has a footprint of 3.3 x 3.3 mm and contains 8 pins.
The maximum gate-source voltage rating for this device is 20 V, ensuring reliable gate drive compatibility.
This model utilizes an N-channel configuration, which is common for enhancement mode MOSFETs.
It is suitable for a wide range of applications, including DC-DC converters, motor control, power supplies, and automotive electronics.
The enhancement mode operation allows for precise switching control and logic-level compatibility, enhancing its usability in various circuits.
The MLPAK33 package has a footprint of 3.3 x 3.3 mm, making it suitable for compact PCB designs.
The trench MOSFET technology used in this model enhances electrical performance by reducing on-resistance and improving efficiency.
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