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Nexperia N-Channel Enhancement MOSFET 10.3A 25V 12.5W Surface Mount MLPAK33 8-Pin PXN6R2-25QLJ
Specifications
| Country of Origin | India |
|---|---|
| Brand | Nexperia |
| Model | PXN6R2-25QLJ |
| Mount Type | Surface |
| Maximum Operating Temperature | 150°C |
| Package Type | MLPAK33 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 10.3A |
| Maximum Drain Source Voltage Vds | 25V |
| Maximum Drain Source Resistance Rds | 13.6mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 12.5W |
| Maximum Gate Source Voltage Vgs | 20V |
Key Features
- Employs Trench MOSFET technology for ultra-low gate charge and high system efficiency.
- Suitable for surface mounting with a compact MLPAK33 3.3 x 3.3 mm package footprint.
- Features fast switching and soft recovery to minimize switching losses.
- Operates between a minimum temperature of -55°C and maximum of 150°C.
- Maximum gate-source voltage rated at 20 V for reliable control.
- Low drain-source resistance of 13.6 mΩ ensures low conduction losses.
- Supports automotive standard compliance with no specific certifications declared.
- 8-pin package designed for compact surface-mount electronic applications.
Product Description
Nexperia PXN6R2-25QLJ is an N-Channel enhancement mode MOSFET engineered with Trench MOSFET technology, offering excellent efficiency and performance in a compact MLPAK33 surface-mount package.
This device supports a maximum continuous drain current of 10.3 A and a maximum drain-source voltage of 25 V, making it suitable for a wide range of power management and switching applications in industrial electronics.
The ultra-low gate charge and gate-to-drain charge characteristics ensure high system efficiency, especially at higher switching frequencies where energy loss reduction is critical.
Designed with fast switching capability and soft-recovery characteristics, this MOSFET minimizes electromagnetic interference through low spiking and ringing. The MLPAK33 package type has a footprint of 3.3 mm x 3.3 mm, optimized for surface mount technology (SMT) assembly, fitting compact electronic devices and tight board layouts.
Trench MOSFET technology reduces switching losses. Compact MLPAK33 package suitable for SMT. Maximum power dissipation up to 12.5 W for robust operation. Wide operating temperature range from -55°C to 150°C for versatility.
Low maximum drain-source resistance of 13.6 mΩ enhances efficiency. Maximum gate-source voltage of 20 V supports stringent control requirements. 8-pin configuration for easy PCB integration. No specific automotive standard compliance declared.
This MOSFET is ideal for applications in power supplies, motor control circuits, renewable energy systems, industrial automation, and other electronic devices requiring efficient switching with low losses.
Engineers and designers seeking reliable semiconductor components can find this Nexperia MOSFET beneficial for optimized system performance and compact design. Browse related MOSFET products and components in the EnvMart Electronics & Electricals category for additional options.
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Frequently Asked Questions
The maximum continuous drain current for this model is 10.3 A.
It can handle a maximum drain-source voltage of 25 V.
The maximum power dissipation for this MOSFET is 12.5 W.
This model comes in a MLPAK33 package type with a footprint of 3.3 mm x 3.3 mm.
The operating temperature range is from -55°C to 150°C.
The maximum gate-source voltage for this device is rated at 20 V.
It features a low drain-source resistance of 13.6 mΩ.
This MOSFET has a pin count of 8.
It employs Trench MOSFET technology for ultra-low gate charge and high system efficiency.
Yes, it is designed for surface mounting with its compact MLPAK33 package.
This MOSFET is suitable for applications in power supplies, motor control circuits, and renewable energy systems.
It supports automotive standard compliance, but no specific certifications are declared.
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