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| Country of Origin | India |
|---|---|
| Brand | Nexperia |
| Model | PXN018-30QLJ |
| Mount Type | Surface |
| Maximum Operating Temperature | 150°C |
| Package Type | MLPAK33 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 7.5A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 13.6mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 12.5W |
| Maximum Gate Source Voltage Vgs | 20V |
Nexperia PXN018-30QLJ is an N-Channel Enhancement Mode MOSFET designed using trench technology, offering efficient switching performance at a maximum drain current of 7.5 A and drain-source voltage up to 30 V. This device is packaged in a compact MLPAK33 surface mount package, facilitating high density PCB layouts in industrial and electronic applications.
The MOSFET's logic-level compatibility makes it suitable for low voltage control circuits, including power management, switching regulators, and load switching in consumer electronics, industrial control, and embedded systems.
Featuring a maximum power dissipation rating of 12.5 W, this MOSFET is capable of operating reliably across a wide temperature range from -55°C to 150°C, supporting use in environments with significant temperature variations.
The device includes an 8-pin MLPAK33 package with a footprint size of 3.3 x 3.3 mm, supporting surface mount technology for efficient manufacturing. The low drain-source resistance of 13.6 milliohms helps reduce power losses and improve system efficiency.
Key technical specifications include a maximum gate-source voltage of ±20 V and a lack of automotive standard certification, indicating intended use primarily for general industrial and electronic applications rather than automotive-critical systems.
Utilizes trench MOSFET technology for high efficiency and low on-resistance. Logic-level compatible for low voltage control applications. Compact MLPAK33 surface mount package with 3.3 x 3.3 mm footprint. Operates reliably in temperature range from -55°C to 150°C.
Supports a maximum continuous drain current of 7.5 A and drain-source voltage up to 30 V. Maximum power dissipation rating of 12.5 W. Maximum gate-source voltage rating of 20 V. Low maximum drain-source resistance (Rds) of 13.6 mΩ to minimize conduction losses.
Surface mount package suitable for compact PCB designs. No special automotive certifications included.
This Nexperia MOSFET PXN018-30QLJ is ideal for industrial electronics, power management circuits, switching regulators, and embedded system designs requiring efficient power switching components. Its compact size and robust electrical ratings ensure adaptability for a wide range of applications in consumer electronics, industrial equipment, and other commercial electronic systems.
Explore similar MOSFETs and semiconductor components in the Electronics & Electricals category on EnvMart for your project and manufacturing needs.
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