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Nexperia N-Channel Enhancement Mode MOSFET 30 V 7.5 A 8-Pin Surface Mount MLPAK33 PXN018-30QLJ

Category MOSFET Brand Nexperia Condition New

Specifications

Country of Origin India
Brand Nexperia
Model PXN018-30QLJ
Mount Type Surface
Maximum Operating Temperature 150°C
Package Type MLPAK33
Minimum Operating Temperature -55°C
Pin Count 8
Channel Type N
Maximum Continuous Drain Current Id 7.5A
Maximum Drain Source Voltage Vds 30V
Maximum Drain Source Resistance Rds 13.6mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 12.5W
Maximum Gate Source Voltage Vgs 20V

Key Features

  • Utilizes trench MOSFET technology for high efficiency and performance.
  • Logic-level compatible, ideal for low voltage switching applications.
  • Compact MLPAK33 package with a 3.3 x 3.3 mm footprint.
  • Maximum power dissipation of 12.5 W suitable for moderate power applications.
  • Wide operating temperature range from -55°C to 150°C ensures reliable performance under harsh conditions.
  • Maximum gate-source voltage rated at ±20 V for robust control.
  • Low maximum drain-source resistance of 13.6 mΩ reducing conduction losses.
  • Surface mount technology for ease of PCB assembly and miniaturization.

Product Description

Nexperia PXN018-30QLJ is an N-Channel Enhancement Mode MOSFET designed using trench technology, offering efficient switching performance at a maximum drain current of 7.5 A and drain-source voltage up to 30 V. This device is packaged in a compact MLPAK33 surface mount package, facilitating high density PCB layouts in industrial and electronic applications.

The MOSFET's logic-level compatibility makes it suitable for low voltage control circuits, including power management, switching regulators, and load switching in consumer electronics, industrial control, and embedded systems.

Featuring a maximum power dissipation rating of 12.5 W, this MOSFET is capable of operating reliably across a wide temperature range from -55°C to 150°C, supporting use in environments with significant temperature variations.

The device includes an 8-pin MLPAK33 package with a footprint size of 3.3 x 3.3 mm, supporting surface mount technology for efficient manufacturing. The low drain-source resistance of 13.6 milliohms helps reduce power losses and improve system efficiency.

Key technical specifications include a maximum gate-source voltage of ±20 V and a lack of automotive standard certification, indicating intended use primarily for general industrial and electronic applications rather than automotive-critical systems.

Utilizes trench MOSFET technology for high efficiency and low on-resistance. Logic-level compatible for low voltage control applications. Compact MLPAK33 surface mount package with 3.3 x 3.3 mm footprint. Operates reliably in temperature range from -55°C to 150°C.

Supports a maximum continuous drain current of 7.5 A and drain-source voltage up to 30 V. Maximum power dissipation rating of 12.5 W. Maximum gate-source voltage rating of 20 V. Low maximum drain-source resistance (Rds) of 13.6 mΩ to minimize conduction losses.

Surface mount package suitable for compact PCB designs. No special automotive certifications included.

This Nexperia MOSFET PXN018-30QLJ is ideal for industrial electronics, power management circuits, switching regulators, and embedded system designs requiring efficient power switching components. Its compact size and robust electrical ratings ensure adaptability for a wide range of applications in consumer electronics, industrial equipment, and other commercial electronic systems.

Explore similar MOSFETs and semiconductor components in the Electronics & Electricals category on EnvMart for your project and manufacturing needs.

Nexperia N-Channel Enhancement Mode MOSFET 30 V 7.5 A 8-Pin Surface Mount MLPAK33 PXN018-30QLJ
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Frequently Asked Questions

The maximum continuous drain current for this model is 7.5 A.

It has a maximum drain-source voltage rating of 30 V.

The maximum power dissipation rating is 12.5 W.

This unit operates reliably across a temperature range from -55°C to 150°C.

It is packaged in an 8-pin MLPAK33 surface mount package with a footprint size of 3.3 x 3.3 mm.

The maximum gate-source voltage is rated at ±20 V.

The maximum drain-source resistance is 13.6 mΩ.

Yes, it is logic-level compatible, making it suitable for low voltage switching applications.

This model features an N-channel enhancement mode.

This MOSFET uses surface mount technology for PCB assembly.

It is suitable for power management, switching regulators, and load switching in various electronic applications.

The country of origin for this MOSFET is India.

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