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Vishay High Power Infrared Emitting Diode 860 nm, Radiant Flux 2100mW, Surface Mount Package VSMA1085250
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Model | VSMA1085250 |
| Packaging | Tape & Reel |
| Mount Type | Surface |
| Series | VSMA1085250 |
| Package Type | Surface Mount |
| Standards/Approvals | JEDEC JS-001, ANSI, ESDA |
| Maximum Supply Voltage | 5V |
| Peak Wavelength | 860nm |
| Radiant Flux | 2100mW |
| Angle of half intensity | 28° |
| Radiant Intensity | 1950mW/sr |
Key Features
- Features a surface mount package suitable for compact assemblies.
- Has a peak wavelength of 860 nm for optimal IR emission.
- Provides radiant intensity of 1950mW/sr for high brightness.
- Designed with a double stack emitter chip for high radiant power.
- Supports maximum supply voltage of 5V with low thermal resistance.
- Has an angle of half intensity of 28 degrees, enabling focused emission.
- ESD protection up to 5 kV according to JEDEC and ANSI standards.
- Packaging is tape and reel, facilitating automated assembly.
Product Description
Vishay VSMA1085250 is a high power infrared emitting diode designed for precision applications requiring strong IR emission at a peak wavelength of 860 nm. This surface mount diode boasts a radiant flux of 2100 mW and radiant intensity of 1950 mW/sr, making it suitable for demanding industrial, commercial, and electronic uses including sensing, detection, and illumination in automated systems.
The diode utilizes a robust double stack emitter chip, enabling it to handle continuous currents up to 1.5 A DC and pulsed currents up to 5.0 A, supported by a compact 3.4 x 3.4 x 2.9 mm lens package. The low thermal resistance design of approximately 6 K/W ensures efficient heat dissipation and reliability during operation. The device features an angle of half intensity of 28 degrees, providing focused and efficient infrared radiation.
Built to meet JEDEC JS-001, ANSI, and ESDA standards, the VSMA1085250 ensures high electrostatic discharge (ESD) protection up to 5 kV, enhancing robustness in industrial environments. It operates on a maximum supply voltage of 5 V and comes in tape and reel packaging optimized for surface mounting and high volume manufacturing.
This diode is ideal for electronics manufacturers and system integrators requiring high performance, durable infrared emitters for applications in industrial automation, sensing technology, electronic signaling, and other related fields.
Surface mount high power IR Diode with 860 nm peak wavelength. Double stack emitter chip capable of high DC and pulsed currents. Radiant flux of 2100 mW and radiant intensity of 1950 mW/sr. Low thermal resistance design for stable operation.
ESD protection compliant up to 5 kV. Compact dimensions of 3.4 x 3.4 x 2.9 mm. Meets JEDEC JS-001, ANSI, and ESDA reliability standards. Tape and reel packaging for automated assembly suitability. Maximum supply voltage rating of 5 V.
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Frequently Asked Questions
The radiant flux of the VSMA1085250 diode is 2100 mW.
The peak wavelength of this diode is 860 nm.
The maximum supply voltage for this model is 5 V.
The radiant intensity of the VSMA1085250 is 1950 mW/sr.
This model has dimensions of 3.4 x 3.4 x 2.9 mm.
It is packaged in tape and reel format, suitable for automated assembly.
The angle of half intensity for the diode is 28 degrees.
This diode complies with JEDEC JS-001, ANSI, and ESDA standards.
The thermal resistance of the VSMA1085250 is approximately 6 K/W.
This diode uses a surface mount type.
It can handle continuous currents up to 1.5 A DC.
It has ESD protection up to 5 kV according to JEDEC and ANSI standards.
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