Infineon Thyristor Module 1600 V Repetitive Peak Reverse Voltage, 320 A Rated Average On-State Current, 9.5 TT320N16SOFHPSA1

Infineon TT320N16SOFHPSA1 Thyristor Module is a high-voltage power semiconductor device expertly engineered for industrial power conversion systems requiring robust current control and transient handling capabilities. Rated for a repetitive peak reverse voltage of 1600 V and a rated average on-state current of 320 A, it guarantees continuous operation within demanding electrical environments.

This thyristor module supports surge current events up to 9500 A, enabling it to absorb severe transient surges without damage, provided thermal limits are respected. Its low gate trigger voltage of 2 V coupled with a maximum gate trigger current of 150 mA allows for precise gate drive control, ensuring efficient switching.

Designed for industrial applications such as heavy-duty motor controls, soft-start circuits, high-energy pulse protection equipment, and utility-scale inverter modules, the module maintains performance reliability at operating temperatures up to 130°C. The 7-pin design promotes straightforward integration into circuits requiring bulk power switching.

Additional technical benefits include a holding current of 150 mA which ensures stable latch operation and a repetitive peak off-state current limited to 60 mA, reducing potential leakage during off-states.

This high-quality module is ideal for power conversion, renewable energy installations, and other industrial electrical system controls where reliable high current and voltage handling are critical.

Repetitive peak reverse voltage of 1600 V supports high-voltage switching applications. Rated average on-state current of 320 A ensures continuous load handling. 9.5 kA surge rating protects against short-term transient current spikes.

Low gate trigger voltage (2 V) meets sensitive gate drive requirements. Maximum operating temperature of 130°C enables use in elevated temperature conditions. 7-pin module design facilitates easy integration. Holding current of 150 mA provides stable latch behaviour.

Peak on-state voltage of 1.47 V reduces power loss during conduction. Repetitive peak off-state current limited to 60 mA reduces leakage current.

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