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| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 16.51mm |
| Length | 10.67mm |
| Model | FFSP0865B |
| Width | 4.8mm |
| Mount Type | Through Hole |
| Series | EliteSiC |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS, Pb-Free |
| Pin Count | 2 |
| Maximum Continuous Forward Current If | 10.1A |
| Peak Reverse Repetitive Voltage Vrrm | 650V |
| Diode Configuration | Single |
| Rectifier Type | Schottky |
| Peak Reverse Current Ir | 160μA |
| Peak Non-Repetitive Forward Surge Current Ifsm | 56A |
| Maximum Forward Voltage Vf | 2.4V |
onsemi FFSP0865B Schottky Diode is a technologically advanced silicon carbide (SiC) device, delivering excellent switching performance and high reliability compared to traditional silicon-based diodes. The 650 V, 10.1 A rating makes it suitable for a variety of industrial, power electronics, and energy applications such as SMPS, solar inverters, and uninterruptible power supplies (UPS).
Its TO-220 through hole mounting package allows easy integration into power switching circuits, providing enhanced power density and efficiency. The diode features a low forward voltage drop of 2.4 V, minimizing power dissipation during conduction.
The device exhibits a peak reverse repetitive voltage of 650 V and a minimal peak reverse current of 160 µA, ensuring excellent blocking capabilities. It withstands high surge currents up to 56 A, making it robust for transient conditions.
The FFSP0865B diode operates reliably across a wide temperature range from -55°C to 175°C maximum junction temperature, supported by its positive temperature coefficient and ease of paralleling without reverse recovery issues. This translates to improved system stability and longer component life.
Constructed with RoHS compliant and Pb-free materials, this Schottky diode aligns with environmental directives, suitable for deployment in automotive and industrial electronic systems where stringent compliance is required.
Provides maximum continuous forward current of 10.1 amperes. Compact TO-220 package with 2-pin configuration for easy mounting. High peak reverse repetitive voltage rating of 650 volts. Operates reliably from -55°C up to a maximum of 175°C junction temperature.
Silicon Carbide (SiC) technology ensures superior switching and thermal performance. Low peak reverse current of 160 microamperes for reduced leakage. Can withstand high surge forward current of up to 56 amperes. RoHS compliant and lead-free for environmental safety.
This Schottky diode is ideal for power semiconductor uses in construction, industrial electronics, renewable energy systems, HVAC controllers, and power supply modules. Its rugged design and high-temperature capability ensure dependable performance in demanding environments.
Explore more power semiconductor solutions from onsemi and related Schottky Diode products on EnvMart for enhanced electronic designs and efficient power management.
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