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Vishay Infrared Photodiode, 65 ° Half Sensitivity Angle, Surface Mount QFN Package VEMD5080X01
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Height | 0.9mm |
| Length | 5mm |
| Model | VEMD5080X01 |
| Packaging | Tape & Reel |
| Width | 4mm |
| Mount Type | Surface |
| Short Circuit Current | 26μA |
| Maximum Operating Temperature | 100°C |
| Package Type | QFN |
| Minimum Operating Temperature | -40°C |
| Polarity | Forward |
| Dark Current | 2nA |
| Open Circuit Voltage | 350mV |
| Package Form | TOP view |
| Standards/Approvals | RoHS |
| Number of Pins | 4 |
| Typical Fall Time | 70ns |
| Automotive Standard | AEC-Q101 |
| Wavelength of Peak Sensitivity | 950nm |
| Spectrums Detected | Infrared |
| Breakdown Voltage | 20V |
| Dimensions (L x W x H in mm) | 5 x 4 x 0.9 |
| Minimum Wavelength Detected | 350nm |
| Maximum Wavelength Detected | 1070nm |
| Angle of Half Sensitivity | 65 ° |
| Floor Life | 72 h, MSL 4, according to J-STD-020 |
| Radiant sensitive area (in mm2) | 7.5 |
Key Features
- Detects infrared spectrum with peak sensitivity at 950 nm.
- Compact dimensions of 5 mm length, 4 mm width, and 0.9 mm height.
- Surface mount package ensures easy PCB integration.
- High sensitivity for visible and near-infrared light detection.
- Fast response times with typical rise and fall times of 70 ns each.
- Low dark current of 2 nA ensuring low noise operation.
- Breakdown voltage of 20 V and open circuit voltage of 350 mV.
- Qualified to automotive standard AEC-Q101 for reliable performance.
Product Description
Vishay VEMD5080X01 Infrared Photodiode is a highly sensitive PIN photodiode designed for detecting visible and near infrared radiation. This device features a low-profile surface-mount QFN package with a compact footprint measuring 5 mm by 4 mm, and a height of 0.9 mm, facilitating seamless integration into electronic circuits and systems.
Equipped with a radiant sensitive area of 7.5 mm², the photodiode exhibits enhanced sensitivity for visible light with a wavelength peak sensitivity centered at 950 nm. It operates efficiently within a wavelength range of 350 nm to 1070 nm, making it suitable for various infrared sensing applications.
The VEMD5080X01 offers fast response times with typical rise and fall times of 70 nanoseconds, ideal for high-speed photo detection requirements. It maintains a low dark current at 2 nA, ensuring high signal integrity and minimal noise interference.
Designed for robustness, this photodiode supports an operating temperature range of -40°C to 100°C and meets automotive-grade reliability through AEC-Q101 qualification. Its electrical characteristics include a short circuit current of 26 μA, a breakdown voltage of 20 V, and an open circuit voltage of 350 mV with a forward polarity.
This component is supplied in tape & reel packaging, enhancing its suitability for automated manufacturing processes. Detects infrared spectrum with peak sensitivity at 950 nm. Compact dimensions of 5 mm length, 4 mm width, and 0.9 mm height.
Surface mount package ensures easy PCB integration. High sensitivity for visible and near-infrared light detection. Fast response times with typical rise and fall times of 70 ns each. Low dark current of 2 nA ensuring low noise operation.
Breakdown voltage of 20 V and open circuit voltage of 350 mV. Qualified to automotive standard AEC-Q101 for reliable performance. Operating temperature range from -40 °C to 100 °C. Supplied in tape & reel packaging for efficient assembly processes.
This photodiode is suitable for industrial, automotive, laboratory, and electronic manufacturing applications requiring precise and fast infrared light detection. Explore the full range of Photodiodes and optoelectronic components at EnvMart to find compatible solutions for your project requirements.
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Frequently Asked Questions
The photodiode has a peak sensitivity wavelength of 950 nm, making it suitable for detecting infrared light.
This model measures 5 mm in length, 4 mm in width, and 0.9 mm in height, facilitating easy integration into electronic circuits.
It operates effectively within a temperature range of -40°C to 100°C, suitable for various environmental conditions.
The dark current for this unit is 2 nA, which helps ensure low noise operation during use.
The breakdown voltage is rated at 20 V, allowing it to handle significant voltage levels without failure.
It is supplied in tape & reel packaging, which is ideal for automated manufacturing processes.
This model has typical rise and fall times of 70 ns each, making it suitable for high-speed photo detection applications.
Yes, it is qualified to the automotive standard AEC-Q101, ensuring reliable performance in automotive environments.
The radiant sensitive area is 7.5 mm², enhancing its sensitivity to visible and near-infrared light.
The photodiode operates with a forward polarity, which is typical for this type of device.
It can detect wavelengths ranging from 350 nm to 1070 nm, making it versatile for various infrared sensing applications.
This model features 4 pins, which are standard for surface mount devices in its category.
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