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Nexperia N-Channel MOSFET, 6 A, 12 V Enhancement, 4-Pin WLCSP PMCM4401VNEAZ

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Nexperia N-Channel MOSFET, 6 A, 12 V Enhancement, 4-Pin WLCSP PMCM4401VNEAZ

Name: Nexperia N-Channel MOSFET, 6 A, 12 V Enhancement, 4-Pin WLCSP PMCM4401VNEAZ
Brand: Nexperia
SKU: 318410
Price: 0.24 USD
Availability: InStock

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Category MOSFET Brand Nexperia Condition New

Specifications

Country of Origin	India
Brand	Nexperia
Height	160μm
Length	810μm
Model	PMCM4401VNEAZ
Width	810μm
Mount Type	Surface
Series	PMCM4401VNE
Maximum Operating Temperature	150°C
Package Type	WLCSP
Minimum Operating Temperature	-55°C
Pin Count	4
Channel Type	N
Maximum Continuous Drain Current Id	6A
Maximum Drain Source Voltage Vds	12V
Maximum Drain Source Resistance Rds	120mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	12.5W
Typical Gate Charge Qg @ Vgs	6nC
Maximum Gate Source Voltage Vgs	8V
Forward Voltage Vf	1.2V
Ultra small package	0.78 x 0.78 x 0.35 mm

Key Features

Features enhancement mode operation suitable for low voltage applications.
Employs reliable TrenchMOS technology for high switching performance.
Ultra small package size of 0.78 x 0.78 x 0.35 mm enables compact circuit design.
Maximum power dissipation rated at 12.5 W for efficient thermal management.
Provides ElectroStatic Discharge protection greater than 2 kV HBM.
Ideal for relay driving, low-side load switching, and high-speed line driver circuits.
Operating temperature range from -55°C to 150°C ensures robust performance.
Forward voltage of 1.2 V and typical gate charge of 6 nC support efficient switching.

Product Description

Nexperia PMCM4401VNEAZ is an N-channel enhancement mode MOSFET designed with TrenchMOS technology, offering superior switching solutions for portable and low voltage applications. This device supports a maximum continuous drain current of 6 A and a drain-source voltage of 12 V, making it suitable for precise power management in compact electronic designs.

The MOSFET uses a 4-pin Wafer Level Chip-Size Package (WLCSP), featuring ultra small dimensions of 0.78 x 0.78 x 0.35 mm which help save PCB space in high-density circuit layouts. Its trench technology ensures high reliability and efficient operation.

Rated for a maximum power dissipation of 12.5 W, the device provides effective thermal management for demanding applications, and includes ElectroStatic Discharge (ESD) protection exceeding 2 kV human body model to enhance robustness against electrical surges.

Typical uses include relay drivers, low-side load switches, high-speed line drivers, and switching circuits in industrial, telecommunications, and consumer portable devices. The device operates reliably over a wide temperature range from -55°C to 150°C.

Enhancement mode operation enables low threshold voltages for efficient switching. The compact WLCSP form factor supports surface mounting and high-density PCB designs. The device's electrical characteristics offer low drain-source resistance (120 mΩ max) ensuring minimal conduction losses.

Low typical gate charge (6 nC) supports fast switching speeds and reduces gate drive power. Robust device architecture provides superior ESD protection and long-term reliability. Forward voltage of 1.2 V ensures compatibility with low voltage systems.

This MOSFET is manufactured in India and supplied new, meeting industrial quality standards. It is ideal for electronics OEMs and design engineers developing power management solutions where space and efficiency are critical.

Choose the Nexperia PMCM4401VNEAZ for dependable, efficient N-channel MOSFET performance in your low voltage, portable, or compact device applications. Explore additional semiconductor and MOSFET products in the EnvMart catalogue for your industrial and manufacturing needs.