Nexperia N-Channel MOSFET 1.05 A, 20 V Enhancement Mode, 3-Pin SOT-23 Package BSH105,215

Nexperia BSH105,215 is an N-Channel MOSFET transistor designed for electronic and power applications requiring efficient switching at a maximum drain current of 1.05 A and a drain-source voltage of 20 V. The device operates in enhancement mode and comes in a compact 3-Pin SOT-23 surface mount package, ideal for modern PCB designs.

This MOSFET provides robust electrical performance with a low maximum drain-source resistance of 200 mΩ, ensuring minimal power losses during switching operations. The typical gate charge of 3.9 nC facilitates fast gate drive operation, enhancing switching speed and efficiency.

The device withstands a wide operating temperature range from -55°C to 150°C, allowing reliable functionality in harsh industrial, automotive electronics, consumer electronics, and power management circuits. Its physical dimensions of 3 mm length, 1.4 mm width, and 1 mm height enable integration into compact electronic assemblies.

With a forward voltage drop of 1 V, this MOSFET ensures efficient conduction. The maximum gate source voltage rating of -8 to +8 V secures safe gate drive limits. Although it does not carry specific industrial certifications, the product meets typical quality standards originating from China.

This Nexperia MOSFET is suited for use in various industrial and commercial electronic applications including power regulation, switching converters, and signal amplification. It is especially suitable for surface mount technology (SMT) assembly lines in manufacturing environments.

Supports a maximum continuous drain current of 1.05 A. Operates at a maximum drain-source voltage of 20 V. Low on-resistance of 200 mΩ allows efficient switching. Enhancement mode channel operation ensures stable transistor control.

Wide operating temperature range from -55°C to 150°C. Compact 3-pin SOT-23 package suitable for surface mounting. Typical gate charge of 3.9 nC enables fast switching. Forward voltage drop rated at 1 V reduces power loss.

Manufactured in China, ensuring consistent quality. Ideal for industrial, consumer electronic, and automotive applications. Explore a comprehensive range of MOSFET and discrete semiconductors on EnvMart for advanced electronics and power management solutions.