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Toshiba Small Signal NPN Bipolar Transistor 150mA 50V 3-Pin TO-236 2SC2712-Y,LF(T

Category Transistor Brand Toshiba Condition New

Specifications

Country of Origin Thailand
Brand Toshiba
Height 1.26mm
Length 2.9mm
Model 2SC2712-Y,LF(T
Width 2.5mm
Mount Type Surface
Series 2SC2712
Maximum Operating Temperature 125°C
Package Type TO-236
Pin Count 3
Maximum Collector Emitter Voltage Vceo 50V
Minimum DC Current Gain hFE 70
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 5V
Maximum Collector Base Voltage VCBO 60V
Maximum Power Dissipation Pd 150mW
Maximum DC Collector Current Idc 150mA
Transistor Configuration Single
Maximum Transition Frequency ft 80MHz

Key Features

  • Designed for surface mount applications with TO-236 package type.
  • Maximum power dissipation of 150mW suitable for low power electronic circuits.
  • High-frequency operation with a transition frequency of 80MHz.
  • Supports a maximum operating temperature of 125°C for reliable performance.
  • NPN transistor configuration with a minimum DC current gain (hFE) of 70.
  • Maximum collector base voltage rating of 60V ensures effective switching.
  • Ideal for small signal amplification in electronic and semiconductor applications.
  • Manufactured in Thailand with consistent quality standards.

Product Description

Toshiba 2SC2712-Y,LF(T is a small signal NPN bipolar transistor designed for surface mount applications. This transistor supports a maximum DC collector current of 150mA and collector-emitter voltage of 50V, making it suitable for various low power electronic circuits.

Featuring a TO-236 package with three pins, it offers compact dimensions of 2.9mm length, 2.5mm width, and 1.26mm height. The device delivers reliable performance up to a maximum operating temperature of 125°C.

With a minimum DC current gain (hFE) of 70 and maximum transition frequency of 80MHz, it ensures efficient signal amplification and switching functions. The transistor configuration is NPN single type, equipped to handle a maximum collector base voltage of 60V and emitter base voltage of 5V.

This transistor dissipates power up to 150mW and is manufactured in Thailand under Toshiba quality standards. Its compact surface mount design suits industrial electronics, telecommunications, and consumer electronic devices requiring reliable bipolar transistor solutions.

Designed for surface mount electronic circuits with TO-236 package. High frequency operation with 80MHz transition frequency. Handles collector current up to 150mA and voltage up to 50V. Compact size for space-constrained PCB designs.

Maximum power dissipation rating of 150mW for low heat generation. Robust maximum operating temperature of 125°C. Manufactured in Thailand ensuring quality and consistency. Applications include amplification, switching, and signal processing.

This Toshiba 2SC2712-Y,LF(T transistor is an excellent choice for engineers and technicians designing low-power electronic devices and semiconductors. Explore other bipolar Transistors and semiconductors at EnvMart for comprehensive industrial and electronic solutions.

Toshiba Small Signal NPN Bipolar Transistor 150mA 50V 3-Pin TO-236 2SC2712-Y,LF(T
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Frequently Asked Questions

The maximum DC collector current for this model is 150mA.

This transistor is packaged in a TO-236 type, suitable for surface mount applications.

It has a maximum transition frequency of 80MHz, allowing for high-frequency operation.

The maximum collector-emitter voltage rating for this model is 50V.

The dimensions of this transistor are 2.9mm in length, 2.5mm in width, and 1.26mm in height.

It supports a maximum power dissipation of 150mW, which is suitable for low power electronic circuits.

The maximum operating temperature is 125°C, ensuring reliable performance under various conditions.

The minimum DC current gain (hFE) is 70, which is essential for effective signal amplification.

The maximum collector-base voltage rating is 60V, allowing for effective switching capabilities.

This model features an NPN transistor configuration, designed for various electronic applications.

It is manufactured in Thailand, adhering to Toshiba's quality standards.

This transistor is ideal for small signal amplification, switching, and signal processing in electronic circuits.

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